APTGT30TL601G Microsemi Corporation, APTGT30TL601G Datasheet - Page 5

• Manufacturer Part Number: APTGT30TL601G
• Description: Three Level Inverter Trench Field Stop Igbt Power Module
• Manufacturer: Microsemi Corporation

60
50
40
30
20
10
2.5
1.5
0.5
60
50
40
30
20
10
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
Switching Energy Losses vs Gate Resistance
0
0
0.00001
2
1
0
1
0
0
5
0
V
V
I
T
C
J
CE
GE
= 30A
0.7
0.1
0.9
0.5
= 150°C
0.3
Output Characteristics (V
T
0.05
10
= 300V
0.5
6
=15V
J
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
=150°C
Transfert Characteristics
Gate Resistance (ohms)
T
Eon
J
20
=125°C
7
T
1
J
=25°C
Eoff
0.0001
30
V
8
V
T
CE
T
J
1.5
GE
=25°C
J
=25°C
(V)
(V)
40
T
9
J
=25°C
2
Eon
10
50
GE
T
J
=15V)
=150°C
0.001
Rectangular Pulse Duration in Seconds
2.5
60
11
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Single Pulse
70
12
3
0.01
70
60
50
40
30
20
10
60
50
40
30
20
10
1.5
0.5
0
0
2
1
0
0
0
0
V
T
R
T
APTGT30TL601G
V
V
R
T
J
GE
G
J
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
=150°C
J
100
CE
GE
G
=10Ω
= 150°C
0.5
0.1
=15V
= 150°C
= 10Ω
= 300V
= 15V
10
200
1
Output Characteristics
20
300
V
1.5
GE
V
I
V
C
=19V
CE
CE
30
(A)
400
(V)
1
(V)
2
V
GE
40
500
2.5
=15V
Eoff
V
GE
V
=13V
GE
600
50
3
=9V
Eon
10
700
3.5
60
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