APTGT30TL601G Microsemi Corporation, APTGT30TL601G Datasheet - Page 6

• Manufacturer Part Number: APTGT30TL601G
• Description: Three Level Inverter Trench Field Stop Igbt Power Module
• Manufacturer: Microsemi Corporation

CR1 to CR4 Typical performance curve
0.375
0.125
3.5
2.5
1.5
0.5
Switching Energy Losses vs Gate Resistance
40
35
30
25
20
15
10
0.25
0.00001
5
0
3
2
1
0
0.5
0
0
10
0.5
0.3
0.9
0.1
0.7
0.05
Forward Characteristic of diode
T
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
J
=150°C
Gate Resistance (ohms)
0.8
30
0.0001
V
F
1.2
(V)
T
J
=25°C
1.6
50
V
I
T
C
J
CE
= 20A
= 150°C
= 300V
0.001
Rectangular Pulse Duration in Seconds
2
Single Pulse
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2.4
70
0.01
0.8
0.6
0.4
0.2
0
0
APTGT30TL601G
V
R
T
Energy losses vs Collector Current
0.1
CE
J
G
= 150°C
= 12Ω
= 300V
10
I
F
20
(A)
1
30
10
40
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