STP40N03L-20 ST Microelectronics, Inc., STP40N03L-20 Datasheet - Page 4

• Manufacturer Part Number: STP40N03L-20
• Description: Old PRODUCT: Not Suitable For Design-in
• Manufacturer: ST Microelectronics, Inc.

STP40N03L-20
PSPICE PARAMETERS
SUBCIRCUIT COMPONENTS
DIODE DRAIN GATE (Depletion Capacitance)
DIODE DRAIN SOURCE
N MOSFET
For Transient Simulation Applicate U.I.C. (Use Initial Condition) Option
4/7
RDRAIN
Symbol
Symbol
Symbol
Symbol
RGATE
THETA
LEVEL
ALFA
Vmax
CGD
RGN
CGS
TOX
VTO
CJO
CJO
LD
LG
U0
KP
S1
S2
LS
VJ
VJ
TT
W
M
M
L
(V14_16<0) (See Power Mosfet Model Subcircuit)
(V16_11<0) (See Power Mosfet Model Subcircuit)
Drain Inductance
Gate Inductance
Source Inductance
Drain Resistance
Gate Resistance
Gate Drain Capacitance
Gate Source Capacitance
Drift Coeficient
Negative Bias Resistance
Zero Bias p-n Capacitance
p-n Potential
p-n Grading Coefficient
Zero Bias p-n Capacitance
p-n Potential
p-n Grading Coefficient
Transit Time
Channel Length
Channel Width
Model Index
Oxide Thickness
Zero Bias Threshold Voltage
Surface Mobility
Mobility Modulation
Maximum Drift Velocity
Trans Conductance Coefficient
Parameter
Parameter
Parameter
Parameter
1.9E
Value
Value
Value
Value
0.005
3.92
0.35
0.55
0.35
0.55
3.25
1E
600
ON
ON
1.9
2.7
10
10
10
10
20
15
8
1
1
1
3
1
0
-3
-2
Meter/sec
Amp/V
cm
Meter
nsec
Unit
Unit
Unit
Unit
Meter
Meter
K
V
V
nH
nH
nH
nF
nF
nF
nF
V
V
V
2
-1
-1
/VS
2