STP3NA80FI ST Microelectronics, STP3NA80FI Datasheet - Page 2

• Manufacturer Part Number: STP3NA80FI
• Description: N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
• Manufacturer: ST Microelectronics

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STP4NA80/FI
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/10
V
Symbol
Symbol
Symbol
Symbol
R
R
R
R
V
g
( BR)DSS
I
thj-cas e
t hc- sin k
thj- amb
I
I
C
C
E
E
G S(th)
DS( on)
D( on)
fs
C
I
I
G SS
DS S
T
A R
A R
AR
oss
AS
iss
rss
( )
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Repetitive Avalanche Energy
(pulse width limited by T
Avalanche Current, Repetitive or Not-Repetitive
(T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage V
Static Drain-source On
Resistance
On State Drain Current V
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
c
= 100
Parameter
Parameter
Parameter
o
j
D S
C, pulse width limited by T
= 25
= 0)
o
GS
C, I
= 0)
D
= I
j
j
I
V
V
V
V
V
V
V
V
AR
Parameter
max,
max,
D
DS
DS
GS
DS
GS
GS
DS
GS
DS
DS
= 250 A
, V
= V
= 10V
= 10 V
= 25 V
= Max Rating
= Max Rating x 0.8 T
=
= 10V
> I
> I
case
D D
D( on)
D( on)
GS
< 1%)
< 1%)
= 50 V)
30 V
= 25
Test Conditions
Test Conditions
Test Conditions
x R
x R
I
I
j
I
D
D
D
f = 1 MHz
max,
V
= 250 A
o
= 2 A
= 2 A
D S(on) max
D S(on) max
C unless otherwise specified)
G S
= 0
< 1%)
T
c
Max
Max
Typ
= 100
V
c
I
G S
D
= 125
= 2 A
= 0
o
C
TO-220
o
C
1.13
Min.
Min.
Min.
2.25
800
2.5
4
62.5
300
Max Value
0.5
ISOWATT220
Typ.
Typ.
Typ.
955
105
2.4
4.3
3.1
2.5
80
24
4
3
2.77
Max.
Max.
Max.
1000
1350
3.75
250
150
35
100
3
6
o
o
o
Unit
Unit
Unit
Unit
nA
pF
pF
pF
C/W
C/W
C/W
mJ
mJ
o
V
V
A
S
A
A
A
A
C