STP3NA90 ST Microelectronics, STP3NA90 Datasheet - Page 2

• Manufacturer Part Number: STP3NA90
• Description: N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
• Manufacturer: ST Microelectronics

STP3NA90/FI
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/6
V
Symbol
Symbol
Symbol
Symbol
R
R
R
R
V
g
(BR)DSS
I
thj-case
thc-sink
I
C
thj-amb
I
C
E
E
DS(on)
C
GS(th)
D(on)
fs
I
I
DSS
GSS
T
AR
AR
oss
AS
AR
rss
iss
( )
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Repetitive Avalanche Energy
(pulse width limited by T
Avalanche Current, Repetitive or Not-Repetitive
(T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-Source Leakage
Current (V
Gate Threshold Voltage V
Static Drain-source On
Resistance
On State Drain Current V
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
c
= 100
Parameter
Parameter
Parameter
o
j
DS
C, pulse width limited by T
= 25
= 0)
o
GS
C, I
= 0)
D
= I
j
j
I
V
V
V
V
V
V
V
V
AR
Parameter
max,
max,
D
DS
DS
GS
DS
GS
GS
DS
GS
DS
DS
= 250 A
, V
= V
= 10 V
= 10 V
= 25 V
= Max Rating
= Max Rating x 0.8 T
=
= 10 V
> I
> I
case
DD
D(on)
D(on)
GS
< 1%)
< 1%)
= 50 V)
30 V
= 25
Test Conditions
Test Conditions
Test Conditions
x R
x R
j
I
f = 1 MHz
max,
I
D
o
D
ID
DS(on)max
DS(on)max
C unless otherwise specified)
= 1.5 A
= 1.5 A
= 250 A
< 1%)
Max
Max
Typ
V
T
V
c
I
GS
c
D
= 125
GS
= 100
= 1.5 A
= 0
= 0
o
o
TO220
C
C
0.8
Min.
Min.
Min.
2.25
900
1.5
3
62.5
300
Max Value
0.5
Typ.
Typ.
Typ.
ISOWATT220
690
4.4
2.8
80
20
45
3
3
2
2
3.12
Max.
1000
Max.
Max.
3.75
10.6
250
900
105
5.3
100
30
o
o
o
Unit
Unit
Unit
Unit
mA
C/W
C/W
C/W
pF
pF
pF
mJ
mJ
o
V
V
A
S
A
A
A
A
C