STPS10L45 ST Microelectronics, STPS10L45 Datasheet - Page 2

• Manufacturer Part Number: STPS10L45
• Description: LOW DROP POWER SCHOTTKY RECTIFIER
• Manufacturer: ST Microelectronics

STPS10L45CT/CG/CF/CFP
THERMAL RESISTANCES
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test : * tp = 380 µs, < 2%
To evaluate the conduction losses use the following equation :
P = 0.33 x I
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
2/7
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
When the diodes 1 and 2 are used simultaneously :
Symbol
Symbol
R
R
Tj(diode 1) = P(diode1) x R
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
R
R
th (j-c)
th (j-c)
V
PF(av)(W)
I
th (c)
th (c)
R
F
*
*
F(AV)
Junction to case
Junction to case
Reverse leakage
current
Forward voltage drop
= 0.05
+ 0.026 I
Parameter
= 0.1
IF(av) (A)
F
= 0.2
2
(RMS)
th(j-c)
(Per diode) + P(diode 2) x R
= 0.5
Tj = 25°C
Tj = 125°C
Tj = 25 C
Tj = 125°C
Tj = 25 C
Tj = 125°C
Parameter
=tp/T
ISOWATT220AB
TO-220FPAB
TO-220AB
D
2
T
PAK
Tests Conditions
= 1
tp
V
I
I
I
I
Fig. 2: Average forward current versus ambient
temperature ( =0.5, per diode).
6
5
4
3
2
1
0
F
F
F
F
0
R
= 5 A
= 5 A
= 10 A
= 10 A
IF(av)(A)
= V
=tp/T
RRM
th(c)
25
T
Per diode
Per diode
Coupling
Coupling
tp
Total
Total
50
Min.
Tamb(°C)
75
Typ.
0.36
0.49
45
Value
0.35
1.7
3.8
2.5
TO-220AB/D²PAK
3
5
100
TO-220FPAB
ISOWATT220AB
Rth(j-a)=15°C/W
Max.
0.15
0.53
0.46
0.67
0.59
90
Rth(j-a)=Rth(j-c)
125
°C/W
°C/W
Unit
Unit
mA
mA
V
150