STGD3HF60WD ST Microelectronics, STGD3HF60WD Datasheet - Page 3

• Manufacturer Part Number: STGD3HF60WD
• Description: 600V ultra fast IGBT
• Manufacturer: ST Microelectronics

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STGD3HF60WD
2
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
V
V
j
(BR)CES
=25 °C unless otherwise specified)
CE(sat)
I
I
C
GE(th)
C
C
Q
Q
CES
GES
g
Q
oes
ies
res
fs
ge
gc
g
Collector-emitter
breakdown voltage
(V
Collector-emitter
saturation voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Dynamic electrical characteristics
GE
GE
Static electrical characteristics
= 0)
= 0)
Parameter
Parameter
CE
= 0)
Doc ID 16582 Rev 1
I
V
V
V
V
V
V
V
V
C
GE
GE
GE
CE
CE
CE
GE
CE
V
V
V
V
(see Figure 3)
= 1 mA
CE
GE
CE
GE
= 15 V, I
= 15 V, I
= V
= 15 V, I
= 600 V
= ±20 V
= 600 V, T
= 15 V
= 25 V, f = 1 MHz,
= 0
= 390 V, I
= 15 V
GE
Test conditions
Test conditions
, I
,
C
C
C
I
C
C
= 250 µA
= 0.5 A, T
= 1.5 A, T
= 1.5 A
= 1.5 A
j
= 125 °C
C
= 1.5 A,
j
j
=125°C
=125°C
Electrical characteristics
Min.
Min.
3.75
600
-
-
Typ.
TBD
Typ. Max.
TBD
TBD
TBD
TBD
TBD
TBD
1.3
2.3
1.8
±100
Max.
5.75
250
-
-
1
Unit
nC
nC
nC
Unit
pF
pF
pF
mA
µA
nA
V
V
V
S
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