P10N60 Infineon Technologies Corporation, P10N60 Datasheet - Page 2

• Manufacturer Part Number: P10N60
• Description: Search -----> SGP10N60
• Manufacturer: Infineon Technologies Corporation

www.DataSheet4U.com
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB
Electrical Characteristic, at T
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
collector connection. PCB is vertical without blown air.
2)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
1)
j
= 25 C, unless otherwise specified
Symbol
R
R
R
V
V
V
I
I
g
C
C
C
Q
L
I
Symbol
C E S
G E S
C ( S C )
f s
E
( B R ) C E S
C E ( s a t )
G E ( t h )
t h J C
t h J A
t h J A
i s s
o s s
r s s
G a t e
SGB10N60, SGW10N60
V
V
T
T
I
V
T
T
V
V
V
V
f= 1 MH z
V
V
T O - 22 0A B
T O - 24 7A C
V
V
T
C
G E
G E
j
j
C E
j
j
C E
C E
C E
G E
C C
G E
G E
C C
j
=2 5 C
=1 5 0 C
= 30 0 A , V
=2 5 C
=1 5 0 C
2
= 0V , I
= 60 0 V, V
= 0V , V
= 20 V , I
= 25 V ,
= 0V ,
= 48 0 V, I
= 15 V
= 15 V ,t
= 15 V , I
Conditions
Conditions
15 0 C
TO-220AB
TO-247AC
TO-263AB
6 0 0 V,
2
(one layer, 70 m thick) copper area for
C
G E
S C
= 5 00 A
C
C E
=2 0 V
= 10 A
G E
C
C
=1 0 A
= 10 A
10 s
= V
= 0 V
G E
min.
600
1.7
3
-
-
-
-
-
-
-
-
-
-
-
-
SGP10N60
Max. Value
Value
Typ.
580
100
1.2
2.2
6.7
62
40
40
70
50
64
13
2
4
7
-
-
-
-
max.
1500
100
696
2.4
2.7
40
84
60
83
5
-
-
-
-
-
Mar-00
Unit
K/W
Unit
V
nA
S
pF
nC
nH
A
A