P10N60 Infineon Technologies Corporation, P10N60 Datasheet - Page 3
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P10N60
Manufacturer Part Number
P10N60
Description
Search -----> SGP10N60
Manufacturer
Infineon Technologies Corporation
Datasheet
1.P10N60.pdf
(12 pages)
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Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
t
t
t
E
E
E
t
t
t
t
E
E
E
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
d ( o n )
r
d ( o f f )
f
o n
o f f
t s
o n
o f f
t s
j
j
=25 C
=150 C
SGB10N60, SGW10N60
T
V
V
R
Energy losses include
“tail” and diode
reverse recovery.
T
V
V
R
Energy losses include
“tail” and diode
reverse recovery.
j
C C
G E
j
C C
G E
G
G
=2 5 C ,
=1 5 0 C
= 25 ,
= 25
3
= 40 0 V, I
= 0/ 15 V ,
= 40 0 V, I
= 0/ 15 V ,
Conditions
Conditions
C
C
= 1 0 A,
= 1 0 A,
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SGP10N60
Value
Value
0.370
0.297
0.577
0.20
0.17
0.28
typ.
typ.
233
266
29
21
49
29
21
63
0.230
0.221
0.451
0.342
0.364
0.706
max.
max.
280
319
35
25
59
35
25
76
Mar-00
Unit
ns
mJ
Unit
ns
mJ