P10N60 Infineon Technologies Corporation, P10N60 Datasheet - Page 6
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P10N60
Manufacturer Part Number
P10N60
Description
Search -----> SGP10N60
Manufacturer
Infineon Technologies Corporation
Datasheet
1.P10N60.pdf
(12 pages)
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100ns
100ns
Figure 9. Typical switching times as a
function of collector current
(inductive load, T
V
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
I
10ns
10ns
C
GE
= 10A, R
0A
= 0/+15V, R
0°C
t
T
t
d(off)
t
d (on)
t
t
t
j
I
f
d(off)
G
d(on)
,
5A
r
C
t
t
JUNCTION TEMPERATURE
r
,
f
= 2 5 )
COLLECTOR CURRENT
50°C
G
j
CE
= 150 C, V
= 25 )
10A
= 400V, V
100°C
15A
CE
GE
= 400V,
= 0/+15V,
20A
150°C
25A
SGB10N60, SGW10N60
6
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0V
100ns
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
V
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I
10ns
GE
C
= 0.3mA)
0
= 0/+15V, I
-50°C
T
j
,
20
JUNCTION TEMPERATURE
R
C
G
,
0°C
= 10A)
j
GATE RESISTOR
= 150 C, V
40
SGP10N60
50°C
CE
60
= 400V,
100°C
80
t
150°C
t
d(on)
t
t
f
r
max.
d(off)
typ.
min.
Mar-00