P10N60 Infineon Technologies Corporation, P10N60 Datasheet - Page 7

• Manufacturer Part Number: P10N60
• Description: Search -----> SGP10N60
• Manufacturer: Infineon Technologies Corporation

www.DataSheet4U.com
0.8mJ
0.6mJ
0.4mJ
0.2mJ
0.0mJ
1.6mJ
1.4mJ
1.2mJ
1.0mJ
0.8mJ
0.6mJ
0.4mJ
0.2mJ
0.0mJ
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
V
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
I
C
GE
= 10A, R
0A
= 0/+15V, R
0°C
*) E
due to diode recovery.
*) E
due to diode recovery.
E
T
E
j
I
E
ts
G
,
on
on
C
5A
*
off
on
JUNCTION TEMPERATURE
,
= 2 5 )
and E
and E
COLLECTOR CURRENT
*
50°C
G
j
CE
ts
ts
= 150 C, V
= 25 )
10A
include losses
include losses
= 400V, V
100°C
15A
CE
GE
= 400V,
= 0/+15V,
20A
150°C
E
E
E
ts
on
off
*
*
25A
SGB10N60, SGW10N60
7
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t
1.0mJ
0.8mJ
0.6mJ
0.4mJ
0.2mJ
0.0mJ
10
10
10
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
V
10
GE
-1
-2
-3
0
K/W
K/W
K/W
K/W
= 0/+15V, I
p
0
1µs
/ T)
0.01
0.02
0.1
0.05
D=0.5
0.2
*) E
due to diode recovery.
E
E
E
single pulse
ts
off
on
*
on
10µs 100µs
*
and E
20
R
C
G
t
p
,
= 10A)
,
j
GATE RESISTOR
= 150 C, V
ts
PULSE WIDTH
include losses
SGP10N60
40
R
0.39
0.403
0.2972
0.1098
R , ( K / W )
1m s
1
C
1
=
CE
1
/ R
10m s 100m s
60
= 400V,
1
C
0.0981
1.71*10
1.04*10
1.37*10
2
=
, ( s ) =
2
/R
80
R
2
-2
-3
-4
Mar-00
2
1s