L3100B STMicroelectronics, L3100B Datasheet

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L3100B

Manufacturer Part Number
L3100B
Description
OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE
Manufacturer
STMicroelectronics
Datasheet

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FEATURES
DESCRIPTION
Dedicated to
protection, this device can provide both voltage
protection and current limitation with a very tight
tolerance.
Its high surge current capability makes the L3100B
a reliable protection device for very exposed
equipment, or when series resistors are very low.
The breakdown voltage can be easily programmed
by using an external zener diode.
A multiple protection mode can also be performed
when using several zener diodes, providing each
line interface with an optimized protection level.
The current limiting function is achieved with the
use of a resistor between the gate N and the
cathode. The value of the resistor will determine
the level of the desired current.
COMPLIESWITH THE FOLLOWING STANDARDS :
TM: ASD is trademarks of SGS-THOMSON Microelectronics.
September 1998 Ed : 3A
CCITT K17 - K20
VDE 0433
CNET
Application Specific Discretes
UNIDIRECTIONAL FUNCTION
PROGRAMMABLE BREAKDOWN VOLTAGE
UP TO 265 V
PROGRAMMABLE CURRENT LIMITATION
FROM 50 mA TO 550 mA
HIGH SURGE CURRENT CAPABILITY
I
PP
= 100A 10/1000 s
A.S.D.
sensitive telecom
10/700
5/310
10/700
5/200
0.5/700 s
0.2/310 s
s
s
s
s
1.5
38
2
50
1.5
38
equipment
kV
A
kV
A
kV
A
OVERVOLTAGE AND OVERCURRENT
PROTECTION FOR TELECOM LINE
SCHEMATIC DIAGRAM
CONNECTION DIAGRAM
Cathode
Gate N
Gate N
Gate P
Cathode
NC
Anode
1
2
3
4
DIL 8
L3100B1
8
7
6
5
L3100B
Gate P
Anode
Anode
Anode
Anode
1/8

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L3100B Summary of contents

Page 1

... Its high surge current capability makes the L3100B a reliable protection device for very exposed equipment, or when series resistors are very low. The breakdown voltage can be easily programmed by using an external zener diode ...

Page 2

... L3100B/L3100B1 ABSOLUTE MAXIMUM RATINGS ( T Symbol I Peak pulse current (see note Non repetitive surge peak on-state TSM current T Storage temperaturerange stg T Maximum operating junction temperature j T Maximum lead temperature for soldering during 10s L Note 1 : Pulse waveform 10/1000 100 ...

Page 3

... 100V RGN G min. max. min 200 0.7 L3100B/L3100B1 max. min. max. note 1 note 500 280 100 500 210 100 = 1mA 100V ...

Page 4

... L3100B/L3100B1 REFERENCE TEST CIRCUIT FOR I Auto Transformer 220V/2A Transformer 220V/800V 5A TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. V Selection OUT - Device with V 200 Volt 250 V OUT RMS - Device with V 200 Volt ...

Page 5

... Figure 3 : Relative variation of breakdown voltage versus ambient temperature. 1.04 1.03 1.02 1.01 1.00 0.99 0. Figure 2 : Relative variation of holding current versus junction temperature. 1.2 F=50Hz Tj initial=25 C 1.1 1.0 0.9 0.8 1E+2 1E+3 0 Figure 4 : Junction capacitance versus reverse applied voltage. 100 L3100B/L3100B1 100 5/8 ...

Page 6

... HOOK + A SPEECH DIALING L3100B\ RINGER for each standardized resistor value. T values specified at the typical gate current level L3100B Min. Max 0.75 0. LOAD I GN Typ. mA 100 ...

Page 7

... Ground key telephone set Protection PROTECTION MODES : ON HOOK = Ringer circuit protection is ensured with breakdown voltage at 265 V. OFF HOOK = In dialing mode and in speech mode, the breakdown voltage of L3100B can be adapted to different levels with zener diodes. ORDER CODE L3100 B 1 VERSION. = VBR = 265 V ...

Page 8

... L3100B/L3100B1 PACKAGE MECHANICAL DATA. DIL 8 (Plastic Weight: 0.59 g Packaging : Product supplied in antistatic tubes. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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