VHFD16 IXYS Corporation, VHFD16 Datasheet - Page 2

• Manufacturer Part Number: VHFD16
• Description: Half Controlled Single Phase Rectifier Bridge
• Manufacturer: IXYS Corporation

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Field Diodes
Symbol
I
I
I
I
I
I
V
V
r
R
R
© 2000 IXYS All rights reserved
Symbol
I
V
V
r
V
I
V
I
I
I
t
t
Q
R
R
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
FAV
FAVM
FRMS
FSM
2
R
R
GT
GD
L
H
T
gd
q
T
t
T
T0
GT
GD
F
T0
thJC
thJH
, I
thJC
thJH
r
, V
for resistive load
D
F
Test Conditions
V
I
For power-loss calculations only (T
V
V
T
T
I
di
T
T
I
T
di/dt = -10 A/ms, dv/dt = 20 V/ms, V
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
Test Conditions
T
per diode
per diode
T
V
T
V
T
V
T
V
V
I
For power-loss calculations only (T
per diode; DC current
per diode; DC current
F
T
G
G
H
VJ
VJ
VJ
VJ
, I
VJ
VJ
VJ
VJ
VJ
R
R
R
R
R
R
D
D
G
= 21 A; T
= 0.3 A; t
= 0.3 A; di
/dt = 0.3 A/ms;
= 85°C, per Diode
= 0 V
= 0 V
= 0 V
= 0 V
= V
= V
= 6 V;
= 6 V;
F
= 45°C;
= T
= 45°C
= T
= T
= T
= 25°C; V
= 25°C; V
= 125°C, I
= 45 A; T
RRM
RRM
VJM
VJM
VJM
VJM
; V
;
;
VJ
G
D
G
= 30 ms; T
D
D
= 25°C
/dt = 0.3 A/ms
T
= V
VJ
= 6 V; R
= 0.5V
= 15 A, t
= 25°C
DRM
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
T
VJ
VJ
= T
= 25°C
DRM
GK
T
T
T
T
T
T
T
V
V
T
T
P
VJM
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
D
D
= 300 ms, V
= ¥
= 2/3 V
= 2/3 V
= T
= 25°C
= 25°C
= -40°C
= 25°C
= -40°C
= 125°C
= 25°C
= -40°C
= 125°C
VJM
DRM
DRM
D
VJ
VJ
= 2/3 V
R
= 125°C)
= 125°C)
= 100 V
DRM
Characteristic Values
Maximum Ratings
typ.
£
£
£
£
£
£
£
£
£
£
£
£
£
£
£
0.15
1.83
2.55
0.75
100
110
150
200
100
100
150
0.9
4.4
5.2
0.3
1.0
1.0
1.2
0.2
2.4
0.6
3.0
85
94
50
50
36
37
50
40
65
80
50
75
4
4
6
1
5
5
2
K/W
K/W
K/W
K/W
K/W
K/W
mW
mW
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mC
A
A
A
A
mA
mA
ms
ms
V
V
V
V
V
V
V
A
A
A
A
A
A
A
2
2
2
2
s
s
s
s
t
V
1000
gd
Fig. 1 Gate trigger range
Fig. 2 Gate controlled delay time t
100
G
0.1
10
10
s
V
1
1
10
1
I
GD
1: I
2: I
3: I
, T
GT
GT
GT
VJ
, T
, T
, T
= 125°C
VJ
VJ
VJ
10
typ.
= 125°C
= 25°C
= -40°C
1
2
100
100
3
Limit
VHFD 16
4: P
5: P
6: P
4
I
I
G
1000
G
GAV
GM
GM
T
5
VJ
= 1 W
= 10 W
mA
= 0.5 W
= 25°C
mA
gd
2 - 3
6
1000