VHFD29 IXYS Corporation, VHFD29 Datasheet - Page 2

• Manufacturer Part Number: VHFD29
• Description: Half Controlled Single Phase Rectifier Bridge
• Manufacturer: IXYS Corporation

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Field Diodes
Symbol
I
I
I
I
I
I
V
V
r
R
R
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
Symbol
I
V
V
r
V
I
V
I
I
I
t
t
Q
R
R
FAV
FAVM
FRMS
FSM
2
R
R
GT
GD
L
H
T
gd
q
T
t
T
T0
GT
GD
F
T0
thJC
thJH
, I
thJC
thJH
r
for resistive load
, V
D
F
Test Conditions
V
I
For power-loss calculations only (T
V
V
T
T
I
di
T
T
I
T
di/dt = -10 A/ms, dv/dt = 20 V/ms, V
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
Test Conditions
T
per diode
per diode
T
V
T
V
T
V
T
V
V
I
For power-loss calculations only (T
per diode; DC current
per diode; DC current
F
T
G
G
H
VJ
VJ
VJ
VJ
, I
VJ
VJ
VJ
VJ
VJ
R
R
R
R
R
R
D
D
G
= 21 A; T
= 0.3 A; t
= 0.3 A; di
/dt = 0.3 A/ms;
= 85°C, per Diode
= 0 V
= 0 V
= 0 V
= 0 V
= V
= V
= 6 V;
= 6 V;
F
= 45°C;
= T
= 45°C
= T
= T
= T
= 25°C; V
= 25°C; V
= 125°C, I
= 45 A; T
RRM
RRM
VJM
VJM
VJM
VJM
; V
;
;
VJ
G
D
G
= 30 ms; T
D
D
= 25°C
/dt = 0.3 A/ms
T
= V
VJ
= 6 V; R
= 0.5V
= 15 A, t
= 25°C
DRM
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
DRM
GK
T
T
T
T
T
T
T
T
T
V
V
T
T
P
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
D
D
= 300 ms, V
= ¥
= 2/3 V
= 2/3 V
= T
= 25°C
= T
= 25°C
= 25°C
= -40°C
= 25°C
= -40°C
= 125°C
= 25°C
= -40°C
= 125°C
VJM
VJM
DRM
DRM
D
VJ
VJ
= 2/3 V
R
= 125°C)
= 125°C)
= 100 V
DRM
Characteristic Values
Maximum Ratings
typ.
£
£
£
£
£
£
£
£
£
£
£
£
£
£
£
0.15
1.83
0.35
100
110
150
200
100
100
150
0.9
4.4
5.2
0.3
1.6
0.9
1.0
1.2
0.2
1.4
2.0
0.5
85
94
50
50
36
37
50
15
65
80
50
75
4
4
6
1
5
5
2
K/W
K/W
K/W
K/W
K/W
K/W
mW
mW
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mC
A
A
A
A
ms
ms
V
V
V
V
V
V
V
A
A
A
A
A
A
A
2
2
2
2
s
s
s
s
t
V
1000
gd
Fig. 1 Gate trigger range
Fig. 2 Gate controlled delay time t
100
G
0.1
10
10
s
V
1
1
10
1
I
GD
1: I
2: I
3: I
, T
GT
GT
GT
VJ
, T
, T
, T
= 125°C
VJ
VJ
VJ
10
typ.
= 125°C
= 25°C
= -40°C
1
2
100
100
3
Limit
VHFD 29
4: P
5: P
6: P
4
I
I
G
1000
G
GAV
GM
GM
T
5
VJ
= 1 W
= 10 W
mA
= 0.5 W
= 25°C
mA
gd
2 - 3
6
1000