MB84VA2003 Fujitsu Media Devices, MB84VA2003 Datasheet - Page 23

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MB84VA2003

Manufacturer Part Number
MB84VA2003
Description
(MB84VA2002 / MB84VA2003) 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM
Manufacturer
Fujitsu Media Devices
Datasheet
Parameter
Symbol
• Write Cycle (Note 4) (WE control) (SRAM)
ADDRESSES
t
t
t
t
t
t
ODW
Write Cycle (SRAM)
t
OEW
t
t
WC
WP
CW
WR
DS
DH
AS
Notes: 2. If CE1s goes LOW (or CE2s goes HIGH) coincident with or after WE goes LOW, the
CE2s
CE1s
D
WE
D
OUT
Write Cycle Time
Write Pulse Width
Chip Enable to End of Write
Address Setup Time
Write Recovery Time
WE Low to Output High-Z
WE High to Output Active
Data Setup Time
Data Hold Time
IN
3. If CE1s goes HIGH (or CE2s goes LOW) coincident with or before WE goes HIGH, the
4. If OE is HIGH during the write cycle, the outputs will remain at high impedance.
5. Because I/O signals may be in the output state at this Time, input signals of reverse
output will remain at high impedance.
output will remain at high impedance.
polarity must not be applied.
Parameter Description
t
AS
Note 5
Note 2
MB84VA2002
t
WC
t
t
CW
CW
t
ODW
t
WP
VALID DATA IN
t
DS
t
OEW
t
DH
-10
t
WR
Min.
100
60
80
40
0
0
0
0
/MB84VA2003
Note 5
Note 3
Max.
40
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
-10
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