MID400-12A4 IXYS Corporation, MID400-12A4 Datasheet - Page 4

• Manufacturer Part Number: MID400-12A4
• Description: 1200V Igbt Module
• Manufacturer: IXYS Corporation

© 2002 IXYS All rights reserved
E
E
I
CM
on
on
200
160
120
500
400
300
200
100
200
150
100
mJ
mJ
80
40
A
50
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy and switching
Fig. 11 Reverse biased safe operating area
0
0
0
0
0
0
t
V
V
I
T
C
r
J
t
CE
GE
d(on)
= 125°C
= 300A
= 600V
= ±15V
200
E
5
on
100
times versus collector current
E
times versus gate resistor
RBSOA
on
10
400
200
R
T
V
15
J
CEK
G
V
V
R
T
= 125°C
= 4.7
600
J
CE
GE
G
< V
= 125°C
= 4.7
= 600V
= ±15V
300
20
CES
800 1000 1200
25
R
400
I
G
C
30
V
500
CE
35
A
t
d(on)
t
V
600
40
r
400
320
240
160
80
0
ns
200
150
100
50
0
ns
t
t
0.000001
0.00001
Z
E
E
0.0001
thJC
off
off
0.001
0.01
100
K/W
0.1
0.00001 0.0001 0.001
mJ
80
60
40
20
mJ
60
50
40
30
20
10
0
1
0
Fig. 8 Typ. turn off energy and switching
Fig.10 Typ. turn off energy and switching
Fig. 12 Typ. transient thermal impedance
0
0
E
V
V
I
T
off
C
J
CE
GE
E
= 125°C
= 300A
= 600V
= ±15V
off
100
5
times versus gate resistor
times versus collector current
single pulse
200
10
0.01
300
15
diode
V
V
R
T
J
CE
GE
G
= 125°C
= 600V
= 4.7
= ±15V
R
400
0.1
20
G
IGBT
I
C
t
500
25
1
MII400-12E4
t
A
d(off)
t
s
d(off)
t
f
t
600
f
30
10
900
750
600
450
300
150
0
2000
1600
1200
800
400
0
ns
ns
4 - 4
t
t