US1881 Melexis Microelectronic Systems, US1881 Datasheet - Page 3

• Manufacturer Part Number: US1881
• Description: CMOS MULTI-PURPOSE LATCH
• Manufacturer: Melexis Microelectronic Systems

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3 Glossary of Terms
MilliTesla (mT), Gauss: Units of magnetic flux density; 1 milliTesla = 10 Gauss.
CMOS – Complementary Metal-Oxide Silicon - A technology for building logic circuits that employs both “N”
and “P” channel MOS transistors. It allows one to make ICs with lots of transistors that consume small
amounts of power.
4 Absolute Maximum Ratings
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum-
rated conditions for extended periods may affect device reliability.
5 US1881 Electrical Characteristics
DC operating parameters: T
3901001881
Rev. 014
Temperature Suffix “E”
Temperature Suffix “K”
Temperature Suffix “L”
Supply Voltage (Operating)
Supply Current (Fault)
Output Voltage
Output Current (Fault)
Power Dissipation, UA/SO packages
Maximum Junction Temperature
Storage Temperature
Operating Temperature Range
Parameter
Supply Voltage
Supply current
Saturation Voltage
Output Leakage
Output Rise Time
Output Fall Time
Maximum Switching
Frequency
Parameter
A
= 25
Symbol
VDD
V
I
I
t
t
DS(on)
DD
OFF
r
f
fsw
o
C, V
Page 3 of 11
DD
Operating
= 12V (unless otherwise specified)
Test Conditions
Operating
B < B
I
B < B
V
V
OUT
DD
DD
= 12V, R
= 12V, R
= 20mA, B > B
OP
RP
, V
OUT
L
L
=24V
= 1k, C
= 1k, C
Value
-40 to 85
-40 to 125
-40 to 150
Symbol
V
V
I
I
OUT
P
T
T
OUT
op,
DD
DD
J
S
D
V
L
L
DD
= 20pF
= 20pF
=4.5÷18V
Value
-50 to 150
700/389
165
Units
24
50
24
50
° C
° C
° C
Min
Units
3.5
1.1
mA
mA
mW
° C
°C
V
V
Typ
0.01
0.04
0.18
US1881
2.0
0.4
10
Max
5.0
0.5
24
10
Jun/05
Units
KHz
mA
uA
us
us
V
V