VVZB120 IXYS Corporation, VVZB120 Datasheet - Page 2

• Manufacturer Part Number: VVZB120
• Description: Three Phase Half Controlled Rectifier Bridge With Igbt And Fast Recovery Diode For Braking System
• Manufacturer: IXYS Corporation

Symbol
I
V
V
r
V
I
V
I
I
I
t
t
Q
I
R
R
V
V
I
I
(SCSOA)
RBSOA
C
t
t
t
t
E
E
R
R
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R
GT
GD
L
H
RM
GES
V
t
gd
q
CES
d(on)
d(off)
fi
T
ri
GT
GD
GE(th)
SC
on
off
, I
F
T0
thJC
thJH
BR(CES)
thJC
thJH
S
ies
CEsat
, V
D
T
Conditions
V
V
I
For power-loss calculations only
T
V
V
T
T
V
di
T
V
di
T
dv/dt = 10 V/µs; I
per thyristor / diode; sine 120° el.
per thyristor / diode; sine 120° el.
V
I
V
V
V
V
V
R
V
R
V
F
C
VJ
VJ
VJ
VJ
VJ
R
R
D
D
D
D
GS
GE
CE
CE
GE
GE
GE
CE
G
G
G
G
= 100 A,
= 10 mA
/dt = 0.45 A/µs; I
/dt = 0.45 A/µs; I
= V
= V
= 6 V; t
= ½ V
= 11 W, non repetitive
= T
= 11 W, Clamped Inductive load, L = 100 µH
T
-di/dt = 0.64 A/µs; I
= 150°C
= 25 V, f = 1 MHz, V
V
V
Inductive load; L = 100 µH
T
= 0 V, I
= 0.8 V
= 0.8 V
= 15 V, I
= 15 V, V
= 15 V, V
= 6 V;
= 6 V;
= T
= T
= T
VJ
= ± 20 V
VJ
CE
GE
RRM
RRM
VJM
= T
= 125°C
VJM
VJM
VJM
= 0.6 V
= 15 V, R
DRM
/V
; V
/V
G
; V
; V
; V
VJM
C
CES
CES
DRM
DRM
= 30 µs
R
C
= 1 mA
T
T
T
T
D
CE
CE
= 100 V; V
= 50 A
,T
VJ
VJ
VJ
VJ
D
D
,
= 6 V; R
, T
CES
=
=
= 0.6 V
= 0.8 V
VJ
= 25°C
= -40°C
= 25°C
= -40°C
VJ
G
2
2
, I
T
= 150°C
/
/
= 11 W
3
3
G
G
= 150°C
= 120 A; -di/dt = 10 A/µs
C
V
V
= 0.45 A
= 0.45 A
= 25 A
DRM
DRM
GK
CES
CES
D
T
GE
/I
= ¥
=
, T
, T
F
= 0 V
2
= 50 A
/
VJ
VJ
3
(T
V
= 125°C,
= 125°C,
DRM
VJ
= 25°C, unless otherwise specified)
; t
P
= 200 µs
1200
min.
Characteristic Values
5
200
typ.
tbd
tbd
4.1
5.7
65
9
100
200
450
200
150
max.
1.5
1.6
0.2
1.47
0.85
3.35
0.32 K/W
0.45 K/W
10
90
11
500
100
0.3 mA
1.3 K/W
0.5 mA
2
10
5
5 mW
1 K/W
8
3
mA
mA
mA
mA
mA
µC
µs
µs
V
V
V
A
mA
mA
mJ
mJ
nA
nF
µs
ns
ns
ns
ns
V
V
V
V
V
A
VVZB 120
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