BAT85AMO Philips Semiconductors (Acquired by NXP), BAT85AMO Datasheet - Page 2

• Manufacturer Part Number: BAT85AMO
• Description: BAT85; Schottky Barrier Diode;; Package: SOD68 (DO-34)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
FEATURES
APPLICATIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2000 May 25
V
I
I
I
I
T
T
T
SYMBOL
F
F(AV)
FRM
FSM
stg
j
amb
Low forward voltage
Guard ring protected
Hermetically-sealed leaded glass
package.
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
R
Schottky barrier diode
continuous reverse voltage
continuous forward current
average forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
PARAMETER
DESCRIPTION
Planar Schottky barrier diode with an integrated protection ring against static
discharges, encapsulated in a hermetically-sealed subminiature SOD68
(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.
Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol.
handbook, halfpage
PCB mounting, lead length = 4 mm;
V
T
t
t
p
p
amb
RWM
1 s; 0.5
10 ms
= 50 C; see Fig.2
= 25 V; a = 1.57; = 0.5;
2
k
CONDITIONS
65
65
MIN.
a
Product specification
30
200
200
300
5
+150
125
+125
MAX.
MAM193
BAT85
V
mA
mA
mA
A
C
C
C
UNIT