PEMD9 Philips Semiconductors (Acquired by NXP), PEMD9 Datasheet - Page 4

• Manufacturer Part Number: PEMD9
• Description: PEMD9; Npn/pnp Resistor-equipped Transistors; R1 = 10 Kohm, R2 = 47 KOhm;; Package: SOT666 (SS-Mini)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
CHARACTERISTICS
T
2002 Sep 05
Per transistor; for the PNP transistor with negative polarity
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
FE
CEsat
i(off)
i(on)
c
NPN/PNP resistor-equipped transistors;
R1 = 10 k , R2 = 47 k
= 25 C; unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input off voltage
input on voltage
input resistor
resistor ratio
collector capacitance
TR1 (NPN)
TR2 (PNP)
PARAMETER
V
V
V
V
V
I
V
V
I
C
E
CB
CE
CE
EB
CE
CE
CE
= i
= 5 mA; I
= 5 V; I
= 50 V; I
= 50 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 0.3 V; I
e
= 0; V
4
CONDITIONS
C
C
B
C
CB
E
B
B
= 0.25 mA
= 0
= 5 mA
= 100 A
C
= 0
= 0
= 0; T
= 1 mA
= 10 V; f = 1 MHz
j
= 150 C
100
1.4
7
3.7
MIN.
0.7
0.8
10
4.7
TYP.
Product specification
100
1
50
150
100
0.5
13
5.7
2.5
3
MAX.
PEMD9
nA
mV
V
V
k
pF
pF
UNIT
A
A
A