PEMD9 Philips Semiconductors (Acquired by NXP), PEMD9 Datasheet - Page 5
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PEMD9
Manufacturer Part Number
PEMD9
Description
PEMD9; Npn/pnp Resistor-equipped Transistors; R1 = 10 Kohm, R2 = 47 KOhm;; Package: SOT666 (SS-Mini)
Manufacturer
Philips Semiconductors (Acquired by NXP)
Datasheet
1.PEMD9.pdf
(12 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PEMD9
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
PEMD9,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Philips Semiconductors
2002 Sep 05
handbook, halfpage
handbook, halfpage
NPN/PNP resistor-equipped transistors;
R1 = 10 k , R2 = 47 k
TR1 (NPN); V
(1) T
(2) T
(3) T
Fig.3
TR1 (NPN); V
(1) T
(2) T
(3) T
Fig.5
V i(off)
(V)
h FE
10
10
1.6
1.2
0.8
0.4
10
amb
amb
amb
amb
amb
amb
10
2
0
10
1
3
2
= 100 C.
= 25 C.
= 40 C.
2
= 40 C.
= 25 C.
= 100 C.
1
DC current gain as a function of collector
current; typical values.
Input-off voltage as a function of collector
current; typical values.
CE
CE
= 5 V.
= 5 V.
10
1
1
10
1
(1)
(2)
(3)
I C (mA)
I C (mA)
(1)
(2)
(3)
MHC031
MHC029
10
10
2
5
handbook, halfpage
handbook, halfpage
V CEsat
TR1 (NPN); I
(1) T
(2) T
(3) T
Fig.4
TR1 (NPN); V
(1) T
(2) T
(3) T
Fig.6
(mV)
V i(on)
(V)
10
10
10
10
10
10
amb
amb
amb
amb
amb
amb
10
10
3
2
1
2
1
1
= 100 C.
= 25 C.
= 40 C.
= 40 C.
= 25 C.
= 100 C.
1
Collector-emitter saturation voltage as a
function of collector current; typical values.
Input-on voltage as a function of collector
current; typical values.
C
CE
/I
B
= 0.3 V.
= 20.
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
Product specification
I C (mA)
I C (mA)
MHC030
PEMD9
MHC032
10
10
2
2