SI9410BDY Vishay Siliconix, SI9410BDY Datasheet - Page 3

• Manufacturer Part Number: SI9410BDY
• Description: N-Channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 72269
S-31409—Rev. A, 07-Jul-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
10
30
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
V
= 8.1 A
0.2
GS
On-Resistance vs. Drain Current
5
= 15 V
3
V
= 4.5 V
SD
Q
g
- Source-to-Drain Voltage (V)
I
0.4
10
D
- Total Gate Charge (nC)
- Drain Current (A)
T
Gate Charge
6
J
= 150_C
0.6
15
9
0.8
20
V
GS
T
12
J
= 10 V
= 25_C
1.0
25
1.2
30
15
New Product
1200
1000
0.10
0.08
0.06
0.04
0.02
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
rss
V
I
D
- 25
GS
= 8.1 A
5
= 10 V
2
T
V
V
0
J
GS
DS
C
- Junction Temperature (_C)
oss
10
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
4
I
D
Vishay Siliconix
50
15
= 8.1 A
Si9410BDY
6
75
20
100
C
iss
www.vishay.com
8
25
125
150
10
30
3