SI9804DY Vishay Siliconix, SI9804DY Datasheet - Page 4

• Manufacturer Part Number: SI9804DY
• Description: N-Channel Reduced Qg/ Fast Switching MOSFET
• Manufacturer: Vishay Siliconix

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4
Si9804DY
Vishay Siliconix
–0.0
–0.2
–0.4
–0.6
–0.8
50
10
0.4
0.2
1
0.01
0.1
–50
0
2
1
10
–4
Source-Drain Diode Forward Voltage
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.2
T
V
J
= 150 C
SD
0
0.4
– Source-to-Drain Voltage (V)
Threshold Voltage
T
J
– Temperature ( C)
I
D
0.6
= 250 A
10
Single Pulse
50
–3
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.8
T
J
= 25 C
1.0
100
1.2
10
–2
Square Wave Pulse Duration (sec)
150
1.4
10
–1
100
0.08
0.06
0.04
0.02
80
60
40
20
0
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
V
2
GS
0.1
1
– Gate-to-Source Voltage (V)
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
I
Time (sec)
D
– T
= 7.8 A
4
t
A
1
= P
t
2
DM
1
Z
thJA
S-54699—Rev. B, 01-Sep-97
thJA
t
t
Document Number: 70626
1
2
10
6
(t)
= 50 C/W
10
30
8
30