L011 IXYS Corporation, L011 Datasheet - Page 2

• Manufacturer Part Number: L011
• Description: Fast Recovery Epitaxial Diode (fred) Module
• Manufacturer: IXYS Corporation

© 2000 IXYS All rights reserved
Fig. 1 Forward current I
Fig. 4 Dynamic parameters Q
I
Fig. 7 Transient thermal impedance junction to heatsink
0.001
Z
F
Z
K
0.01
K/W
thJH
800
700
600
500
400
300
200
100
f
thJS
2.0
1.5
1.0
0.5
0.0
0.1
A
0.001
0
1
0.0
0
max. voltage drop V
versus junction temperature T
T
T
VJ
VJ
40
=125°C
= 25°C
I
Q
0.5
RM
r
80
0.01
F
T
1.0
versus
VJ
V
F
120
F
per leg
r
V
, I
°C
RM
160
1.5
VJ
0.1
Q
t
rr
r
Fig. 2 Typ. reverse recovery
Fig. 5 Typ. recovery time t
220
200
180
160
140
120
100
3.0
m
2.5
2.0
1.5
1.0
0.5
0.0
ns
C
100
0
T
V
R
VJ
charge Q
versus -di
= 100V
= 100°C
200
400
I
I
I
F
F
F
1
r
=1100A
= 550A
= 275A
F
versus -di
/dt
-di
600
F
-di
/dt
T
V
I
I
I
F
F
F
VJ
t
F
R
=1100A
= 550A
= 275A
/dt
= 100°C
= 100V
A/
rr
s
800
F
A/
/dt
m
MEO 550-02
m
s
s
1000
1000
10
I
V
RM
FR
Fig. 3 Typ. peak reverse current I
Fig. 6 Typ. peak forward voltage V
Constants for Z
60
50
40
30
20
10
60
40
20
A
V
0
0
1
2
3
4
0
0
i
T
V
T
I
t
F
VJ
R
fr
VJ
= 100°C
= 100V
versus -di
and t
= 100°C
= 550A
200
200
I
I
I
F
F
F
=1100A
= 550A
= 275A
MEO 550-02 DA
fr
R
0.001
0.004
0.027
0.082
versus di
thi
400
400
thJS
(K/W)
F
/dt
calculation:
600
600
di
-di
V
F
F
/dt
FR
/dt
F
/dt
A/
A/
800
800
t
0.08
0.024
0.112
0.464
m
m
i
s
s
(s)
1000
1000
RM
6
5
4
3
2
1
0
2 - 2
FR
s
t
fr