FT221XQ-R International Semiconductor Technologies, FT221XQ-R Datasheet - Page 23

• Manufacturer Part Number: FT221XQ-R
• Description: Specifications: Applications: * ; Interface: * ; Voltage - Supply: 3.3 V ~ 5 V ; Package / Case: 20-VFQFN Exposed Pad ; Packaging: Digi-Reel
• Manufacturer: International Semiconductor Technologies

Table 6.5 I/O Pin Characteristics VCCIO = +2.5V (except USB PHY pins)
* The I/O drive strength and slow slew-rate are configurable in the MTP memory.
Parameter
Voh
Vt+
Rpu
Rpd
Vih
Vol
Vt-
Ioz
Iin
Vil
Vt
Schmitt trigger negative
Tri-state output leakage
Input pull-up resistance
going threshold voltage
Schmitt trigger positive
going threshold voltage
Input Leakage Current
Input High Switching
Output Voltage High
Switching Threshold
Input low Switching
Output Voltage Low
Input pull-down
Description
Copyright © 2013 Future Technology Devices International Limited
resistance
Threshold
Threshold
current
Minimum
2.25
2.25
2.25
2.25
0.8
-10
-10
40
40
Typical
VCCIO
VCCIO
VCCIO
VCCIO
+/-1
+/-1
1.1
0.8
1.2
75
75
0
0
0
0
Document No.: FT_000630 Clearance No.: FTDI# 263
Maximum
VCCIO
VCCIO
VCCIO
VCCIO
0.4
0.4
0.4
0.4
190
190
0.8
10
10
Units
KΩ
KΩ
μA
μA
V
V
V
V
V
V
V
V
V
V
V
V
V
I/O Drive strength*
I/O Drive strength*
I/O Drive strength*
I/O Drive strength*
I/O Drive strength*
I/O Drive strength*
I/O Drive strength*
I/O Drive strength*
Version 1.2
Vin = 5.5V or 0
Ioh = +/-2mA
Iol = +/-2mA
Conditions
Vin =VCCIO
= 12mA
= 16mA
= 12mA
= 16mA
Vin = 0
Vin = 0
= 4mA
= 8mA
= 4mA
= 8mA
LVTTL
LVTTL
LVTTL
23