STM915-16 ST Microelectronics, Inc., STM915-16 Datasheet - Page 2

• Manufacturer Part Number: STM915-16
• Description: RF Power Module GSM Mobile Applications . Linear Power Amplifier
• Manufacturer: ST Microelectronics, Inc.

STM915-16
ELECTRICAL SPECIFICATIONS (T
Notes: 1) P
GSM SPECIFIC TESTS
2/7
Symbol
VSWR
Symbol
V
I
P
CONT
BW
CONT
I
I
I
OUT
T
H
Q1
Q2
Q3
2) Pulse Width
Repetition rate
r
IN
IN
AM/AM Conversion
Gain
AM/PM Conversion P
Frequency Range
Output Power
Efficiency
Leakage Current,
V
Bias Current,
V
Quiescent Current,
V
Control Dynamic
Range
Isolation
Harmonics
Input VSWR
Control Voltage
Control Current
Noise Power
Stability
Load Mismatch
1.0mW adjust V
S1
S3
S4
Rise Time
, V
Parameter
Parameter
S2
3
1, 2
577 sec.
4.6 msec.
1, 2
1, 2
1, 2, 4
1,2
CONTROL
1,2
1,2
for specified P
P
V
P
P
P
P
V
P
V
V
V
V
V
P
P
P
30 KHz Bandwidth, 20 MHz above f
P
P
V
Load VSWR
All phase angles
VSWR
V
IN
CONTROL
OUT
OUT
OUT
OUT
IN
CONT
OUT
CONT
CONT
CONT
CONT
CONT
OUT
OUT
OUT
OUT
OUT
S2
varied +/ .5 dB
, V
15.6Vdc
(f
(f
f
o
case
o
o
S4
13, 30, 42 dBm
+13 to + 42 dBm
(0 dBm)+[f
42 dBm reference
+13 dBm to +42 dBm
+13 to +42 dBm
+13 dBm to +42 dBm CW
16 W
+ 200 kHz)
4.0 Vdc
0 Vdc
0 Vdc
0 Vdc
0 to 4.0V
0 Vdc
adjusted for
10:1 All phase angles
14 to +42 dBm
OUT
200 kHz)
10.8 to 15.6 V
.
25 C, V
Test Conditions
Test Conditions
6:1 Source VSWR
3) P
4)T
P
OUT
o
r
OUT
+ 200 kHz ( 40 dBm)]
measured at 1% to 81% of P
P
P
P
P
S1
T
V
IN
IN
IN
IN
C
(Reference)
S2, S4
, V
16 W
S3
1 mW
1 mW
1 mW
1 mW
20 to +60°C
0 to 15.6V
8.0 Vdc; V
42 dBm
0
3:1
S2
OUT
, V
in watts
S4
All Spurious outputs more
than 60dB below carrier
No Degradation in Output
Power
Min.
Min.
890
16
35
56
0
12.5 Vdc)
Value
Value
Typ.
Typ.
140
200
0.5
1.0
41
70
4
40
45
2.0:1
Max.
Max.
915
150
250
2.0
4.0
2.0
1.0
14
45
65
REF. 1014655E
MHz
dBm
dBm
Unit
Unit
°/dB
dBc
Vdc
dBc
dBc
mA
mA
mA
mA
dB
Sec
W
%