SI7120ADN Vishay Siliconix, SI7120ADN Datasheet - Page 4

• Manufacturer Part Number: SI7120ADN
• Description: N-Channel 60 V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

www.DataSheet.co.kr
Si7120ADN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.4
0.2
40
10
0
- 50
1
0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
T
T
J
J
I
25
D
- Temperature (°C)
= 150 °C
= 250 μA
0.6
50
75
0.8
0.01
100
0.1
T
10
100
J
1
0.1
= 25 °C
1.0
Limited by R
* V
Limited
I
125
D(on)
GS
Single Pulse
T
> minimum V
A
New Product
V
= 25 °C
150
1.2
DS
DS(on)
- Drain-to-Source Voltage (V)
Safe Operating Area
1
*
GS
at which R
BVDSS Limited
DS(on)
10
0.10
0.08
0.06
0.04
0.02
0.00
50
40
30
20
10
0
0.01
I
is specified
0
DM
On-Resistance vs. Gate-to-Source Voltage
Limited
Single Pulse Power, Junction-to-Ambient
I
D
= 9.5 A
0.1
P(t) = 100 ms
P(t) = 1 ms
P(t) = 10 ms
P(t) = 100 ms
P(t) = 1 s
P(t) = 10 s
DC
2
100
V
GS
- Gate-to-Source Voltage (V)
4
1
Time (s)
S10-1041-Rev. A, 03-May-10
Document Number: 72959
6
10
8
100
600
10
Datasheet pdf - http://www.DataSheet4U.net/