SI7141DP Vishay Siliconix, SI7141DP Datasheet

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SI7141DP

Manufacturer Part Number
SI7141DP
Description
P-Channel 20-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7141DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7141DP-T1-GE3
Quantity:
70 000
www.DataSheet.co.kr
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 54 °C/W.
d. Package limited.
e. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 65596
S10-0042-Rev. A, 11-Jan-10
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
PRODUCT SUMMARY
V
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
DS
- 20
(V)
0.0030 at V
0.0019 at V
8
6.15 mm
D
R
7
DS(on)
D
Si7141DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
6
GS
GS
D
Bottom View
(Ω)
PowerPAK SO-8
= - 4.5 V
= - 10 V
5
J
= 150 °C)
D
a, c
1
P-Channel 20-V (D-S) MOSFET
S
2
I
- 60
- 60
D
S
(A)
3
d
d
S
5.15 mm
e, f
4
G
A
Q
= 25 °C, unless otherwise noted
128 nC
g
(Typ.)
Steady State
New Product
t ≤ 10 s
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
C
C
C
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
• Adaptor Switch
• Battery Switch
• Load Switch
Definition
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
S
AS
D
g
stg
Tested
®
Power MOSFET
Typical
0.9
15
- 55 to 150
- 5.6
6.25
- 42.7
4.0
Limit
- 100
- 60
- 60
- 34
- 60
± 20
66.6
Maximum
- 20
- 40
104
260
80
a, b
a, b
a, b
1.2
d
d
b
d
Vishay Siliconix
20
b
G
P-Channel MOSFET
Si7141DP
www.vishay.com
S
D
°C/W
Unit
Unit
mJ
°C
W
V
A
1
Datasheet pdf - http://www.DataSheet4U.net/

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SI7141DP Summary of contents

Page 1

... PowerPAK SO-8 6. Bottom View Ordering Information: Si7141DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si7141DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance ...

Page 3

... New Product 1.0 1.5 2.0 2 Drain Current ( 120 180 240 300 Gate Charge Si7141DP Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 18 000 C ...

Page 4

... Si7141DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.001 0.0 0.2 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.8 0.6 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product °C J 0.6 0.8 1.0 1 250 µ ...

Page 5

... Package Limited 100 T - Case Temperature (°C) C Current Derating* 75 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si7141DP Vishay Siliconix 125 150 3.0 2.4 1.8 1.2 0.6 0 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www ...

Page 6

... Si7141DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies ...

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