SI7186DP Vishay Siliconix, SI7186DP Datasheet - Page 4

• Manufacturer Part Number: SI7186DP
• Description: N-Channel 80-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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Si7186DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
0.01
100
- 0.3
- 0.6
- 0.9
- 1.2
- 1.5
0.1
10
0.6
0.3
0.0
1
0.00
- 50
Source-Drain Diode Forward Voltage
- 25
0.2
V
150 °C
DS
0
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
T
J
25
- Temperature (°C)
0.6
50
0.01
100
I
0.1
D
10
0
1
75
= 250 µA
0 .
25 °C
0.8
1
Limited by R
Safe Operating Area, Junction-to-Ambient
* V
100
GS
1.0
> minimum V
I
D
V
= 5 mA
125
DS
Single Pulse
0.1
T
DS(on)
A
- Drain-to-Source Voltage (V)
= 25 °C
1.2
150
*
GS
at which R
1
DS(on)
1
0
is specified
0.10
0.08
0.06
0.04
0.02
0.00
200
160
120
80
40
0
0
4
0 .
0
1
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
1
0
10 ms
100 ms
1 s
10 s
1 ms
DC
0
5
V
0.01
GS
- Gate-to-Source Voltage (V)
6
Time (s)
S09-0271-Rev. B, 16-Feb-09
25 °C
0.1
7
125 °C
Document Number: 69257
8
1
I
D
= 10 A
9
10
1
0
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