CEM4435 Chino Excel Technology, CEM4435 Datasheet
CEM4435
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CEM4435 Summary of contents
Page 1
... CEM4435 P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -30V , - =20m DS(ON) - =35m DS(ON) Super high dense cell design for extremely low R High power and current handing capability. Surface mount Package. ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @T -Pulsed ...
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... D(ON -1A -10V Ω D(OFF) GEN =-15V -4.6A =- 5-45 CEM4435 C Min Typ Max Unit - 100 -5A -20 15 -8A 2647 = 0V 870 227 105 145 ...
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... CEM4435 ELECTRICAL CHARACTERISTICS (T Parameter DRAIN-SOURCE DIODE CHARACTERISTICS 5 Diode Forward Voltage Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing 0 Drain-to-Source Voltage (V) DS Figure 1. Output Characteristics 3600 3000 ...
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... Drain-Source Current (A) DS Figure 7. Transconductance Variation with Drain Current 10 V =-15V =-4. Qg, Total Gate Charge (nC) Figure 9. Gate Charge CEM4435 1.15 I =-250 A D 1.10 1.05 1.00 0.95 0.90 0.85 -50 - Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature 20.0 V =0V GS 10.0 1.0 20 ...
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... CEM4435 GEN Figure 11. Switching Test Circuit 2 1 Duty Cycle=0.5 0.2 0.1 0.1 0.05 0.02 0. Figure 13. Normalized Thermal Transient Impedance Curve - OUT Single Pulse - Square Wave Pulse Duration (sec) 5- d(off) d(on) 90% OUT 10% 10% 90% 50% 50% ...