CEM4435 Chino Excel Technology, CEM4435 Datasheet - Page 4

• Manufacturer Part Number: CEM4435
• Description: P-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Chino Excel Technology

Figure 7. Transconductance Variation
1.09
1.06
1.03
1.00
0.97
0.94
0.91
Figure 5. Gate Threshold Variation
10
20
16
12
8
6
4
2
0
8
4
0
-50 -25
0
0
-I
Tj, Junction Temperature ( C)
V
I
V
I
D
DS
7
D
Figure 9. Gate Charge
DS
=-4.6A
DS
=-250 A
with Drain Current
Qg, Total Gate Charge (nC)
=-15V
, Drain-Source Current (A)
=V
with Temperature
0
14 21 28 35
5
GS
25
10
50
75 100 125 150
V
DS
15
42 49 56
=-15V
20
5-47
Figure 6. Breakdown Voltage Variation
Figure 8. Body Diode Forward Voltage
20.0
10.0
0.03
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.0
0.1
80
10
1
-50 -25
0.4
0.1
CEM4435
I
Figure 10. Maximum Safe
D
-V
Tj, Junction Temperature ( C)
Variation with Source Current
=-250 A
V
SD
with Temperature
Single Pulse
GS
0.6
V
T
-V
, Body Diode Forward Voltage (V)
=0V
GS
A
0
DS
=25 C
=-10V
, Drain-Source Voltage (V)
25
1
0.8
Operating Area
50
1.0
75 100 125 150
10
1.2
30 50
1.4
5