CEM4435 Chino Excel Technology, CEM4435 Datasheet - Page 3

• Manufacturer Part Number: CEM4435
• Description: P-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Chino Excel Technology

5
ELECTRICAL CHARACTERISTICS (T
Notes
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
Diode Forward Voltage
DRAIN-SOURCE DIODE CHARACTERISTICS
CEM4435
Parameter
3600
3000
2400
1800
1200
600
25
20
15
10
0
5
0
Figure 1. Output Characteristics
0
0
-V
-V
Figure 3. Capacitance
0.5
DS
DS
5
, Drain-to Source Voltage (V)
, Drain-to-Source Voltage (V)
10
1.0
15
1.5
Ciss
Coss
Crss
-V
GS
20
2.0
=10,8,7,6,5V
Symbol
-V
-V
GS
GS
V
2.5
25
SD
=4V
=3V
A
=25 C unless otherwise noted)
30
3.0
5-46
b
V
GS
Condition
= 0V, Is = -2.1A
Figure 4. On-Resistance Variation with
0.06
0.05
0.04
0.03
0.02
0.01
30
24
18
12
6
0
0
0
0
Figure 2. Transfer Characteristics
Drain Current and Temperature
-V
V
1
GS
GS
-I
=-10V
, Gate-to-Source Voltage (V)
5
D
, Drain Current(A)
2
Tj=125 C
10
3
Min Typ Max Unit
-55 C
Tj=125 C
25 C
-55 C
25 C
4
-0.75 -1.2
15
5
C
20
6
V