HY27UH088GDM Hynix Semiconductor, HY27UH088GDM Datasheet

HY27UH088GDM

Manufacturer Part Number

HY27UH088GDM

Description

8G-Bit NAND Flash Memory

Manufacturer

Hynix Semiconductor

Datasheet

1.HY27UH088GDM.pdf (53 pages)

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Document Title

8Gbit (1Gx8bit) NAND Flash Memory

Revision History

Rev 0.5 / Oct. 2005

Revision

No.

0.0

0.1

0.2

0.3

0.4

Initial Draft.

1) Add Errata

1) Correct the valid Blocks Number.

1) Add tRSBY (Table11)

- tRSBY (Dummy Busy Time for Cache Read)

- tRSBY is 5us (typ.)

2) Edit figure 18, 19

3) Correct Extended Read Status Register Commands (Table. 19)

1) Add TLGA package

- Figures & texts are added.

2) Correct the test Conditions (DC Characteristics table)

3) Change AC Conditions table

4) Add tWW parameter ( tWW = 100ns, min)

- Texts & Figures are added.

- tWW is added in AC timing characteristics table.

5) Edit System Interface Using CE don’t care Figures.

6) Correct Address Cycle Map.

VIN=VOUT=0 to Vcc (max)

Relaxed value

Specification

Test Conditions (

VIN=VOUT=0 to 3.6V

Before

After

Valid Blocks (max)

LI,

tWH

8,196

8,192

)

History

tWP

tWC

8Gbit (1Gx8bit) NAND Flash

HY27UH088G(2/D)M Series

May. 13. 2005

May. 23. 2005

Sep. 16. 2005

Jun. 13. 2005

Jun. 14. 2005

Draft Date

Preliminary

Remark

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