MT54V1MH18A Micron Semiconductor Products, Inc., MT54V1MH18A Datasheet - Page 12

• Manufacturer Part Number: MT54V1MH18A
• Description: 18Mb QDR SRAM, 2.5V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 9:
Notes appear following parameter tables on page 14; 0°C £ T
Table 10: Capacitance
Note 13; notes appear following parameter tables on page 14
Table 11: Thermal Resistance
Note 13; notes appear following parameter tables on page 14
18Mb: 2.5V V
MT54V1MH18A_16_F.fm – Rev. F, Pub. 3/03
DESCRIPTION
Stop Clock Current
DESCRIPTION
DESCRIPTION
Operating Supply
Current: DDR
Standby Supply
Current: NOP
Output Supply
Current: DDR
(Information only)
Address/Control Input Capacitance
Output Capacitance (Q)
Clock Capacitance
Junction to Ambient
(Airflow of 1m/s)
Junction to Case (Top)
Junction to Balls (Bottom)
.
DD
, HSTL, QDRb2 SRAM
I
DD
Operating Conditions and Maximum Limits
Cycle time
and data bits toggling on
Outputs open; 100% bus
utilization; 50% address
All inputs £ V
All addresses/data static
t
KHKH =
Device in NOP state;
each clock cycle
Cycle time = 0;
CONDITIONS
Input Static
C
L
³
t
= 15pF
KHKH (MIN);
t
Soldered on a 4.25 x 1.125 inch,
KHKH (MIN);
IL
4-layer printed circuit board
or
T
³
A
= 25ºC; f = 1 MHz
V
CONDITIONS
CONDITIONS
IH
;
SYMBOL
I
DD
x18
x36
I
x18
x36
x18
x36
I
I
SB1
DD
SB
12
Q
A
£ +70°C; V
TYP
TBD
TBD
TBD
TBD
2.5V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
SYMBOL
= 2.5V ±0.1V unless otherwise noted
C
C
C
CK
SYMBOL
O
400
500
150
160
I
75
21
47
-6
q
DD
q
q
JA
JC
JB
1 MEG x 18, 512K x 36
, HSTL, QDRb2 SRAM
MAX
-7.5
310
400
125
135
75
17
38
TYP
4.5
5.5
6
19.4
TYP
1.0
9.6
225
300
110
120
-10
75
13
29
MAX
5.5
6.5
UNITS
ºC/W
ºC/W
7
ºC/W
UNITS
mA
mA
mA
mA
©2003 Micron Technology, Inc.
NOTES
UNITS
NOTES
10, 11
9, 10
pF
pF
pF
14
15
10
12