MT54V1MH18A Micron Semiconductor Products, Inc., MT54V1MH18A Datasheet - Page 16

• Manufacturer Part Number: MT54V1MH18A
• Description: 18Mb QDR SRAM, 2.5V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE:
18Mb: 2.5V V
MT54V1MH18A_16_F.fm – Rev. F, Pub. 3/03
1. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following
2. Outputs are disabled (High-Z) one clock cycle after a NOP.
3. In this example, if address A0 = A1, then data Q00 = D10 and Q01 = D11. Write data is forwarded immediately as
CQ#
W#
CQ
K#
R#
C#
Q
K
A
D
C
A0, i.e., A0 + 1.
read results. (This note applies to whole diagram.)
1
A0
D10
READ
t KHCH
DD
, HSTL, QDRb2 SRAM
t KHKL
t AVKH t KHAX
t KHKL
D11
A1
2
WRITE
t
IVKH
t KLKH
t CHQX1
t CHCQX
t KHCH
t AVKH t KHAX
t KLKH
t CHCQV
D30
A2
3
READ
t DVKH
t CQHQX1
t KHKH
t KHIX
t
t KHK#H
t CHCQV
t
CHQV
t CHQX
Q00
D31
A3
4
WRITE
READ/WRITE Timing
t KHDX
t CHQV
t CHQX
t CHCQX
Q01
D50
A4
5
Figure 6:
READ
t KHK#H
t KHKH
16
Q20
D51
A5
t CQHQV
6
WRITE
t DVKH
2.5V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q21
D60
7
NOP
DD
1 MEG x 18, 512K x 36
t KHDX
, HSTL, QDRb2 SRAM
t CQHQX
Q40
D61
A6
8
WRITE
DON’T CARE
t CHQZ
Q41
9
NOP
©2003 Micron Technology, Inc.
UNDEFINED
t CQHQZ
10