MT54V1MH18E Micron Semiconductor Products, Inc., MT54V1MH18E Datasheet - Page 16

• Manufacturer Part Number: MT54V1MH18E
• Description: 18Mb QDR SRAM, 2.5V Vdd, Hstl, 4-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE:
18Mb: 2.5V V
MT54V1MH18E_16_F.fm – Rev. F, Pub. 3/03
1. Q00 refers to output from address A0 + 1. Q01 refers to output from the next internal burst address following
2. Outputs are disabled (High-Z) one clock cycle after a NOP.
3. In this example, if address A2 = A1, then data Q20 = D10, Q21 = D11, Q22 = D12, Q23 = D13. Write data is forwarded
A0, i.e., A0 + 1.
immediately as read results. (This note applies to whole diagram.)
DD
, HSTL, QDRb4 SRAM
CQ#
W#
CQ
K#
R#
C#
Q
K
A
D
C
Qx2
NOP
1
t KHKL
t
IVKH
t KHCH
t KLKH
t AVKH t KHAX
A0
READ
2
t KHCH
t KHKH
t KHIX
t CHCQV
t CHCQX
t CHQX1
t KHKH
t CHQV
A1
WRITE
3
t KHK#H
t DVKH
READ/WRITE Timing
Q00
t KHDX
t CQHQX1
t KHK#H
Figure 6:
D10
Q01
t CHCQX
A2
READ
4
t CHCQV
t CHQV
t CHQX
16
D11
Q02
t
IVKH
t DVKH
D12
Q03
t KHDX
A3
2.5V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WRITE
5
t KHIX
D13
Q20
t CHQX
DD
1 MEG x 18, 512K x 36
D30
Q21
NOP
6
, HSTL, QDRb4 SRAM
t CQHQV
DON’T CARE
t
KHKL
D31
Q22
t CHQZ
t CQHQX
t KLKH
D32
Q23
7
UNDEFINED
D33
t CHQZ
©2003 Micron Technology, Inc.