MT55L128L32F1 Micron Semiconductor Products, Inc., MT55L128L32F1 Datasheet - Page 17

• Manufacturer Part Number: MT55L128L32F1
• Description: 4Mb ZBT SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

I
(Note 1) (0°C ≤ T
NOTE: 1. V
4Mb: 256K x 18, 128K x 32/36 Flow-Through ZBT SRAM
MT55L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN
DESCRIPTION
Power Supply
Current:
Operating
Power Supply
Current: Idle
CMOS Standby
TTL Standby
Clock Running
SNOOZE MODE
DD
OPERATING CONDITIONS AND MAXIMUM LIMITS
2. I
3. “Device deselected” means device is in a deselected cycle as defined in the truth table. “Device selected” means device
4. Typical values are measured at 3.3V, 25°C and 12ns cycle time.
greater output loading.
is active (not in deselected mode).
DD
DD
is specified with no output current and increases with faster cycle times. I
Q = +3.3V ±0.165V for 3.3V I/O configuration; V
A
≤ +70°C; V
or ≥ V
ADV/LD# ≥ V
All inputs static; CLK frequency = 0
All inputs static; CLK frequency = 0
All inputs ≤ V
All inputs ≤ V
Device selected; All inputs ≤ V
or ≥ V
Device deselected; V
Device deselected; V
Device deselected; V
Device selected; V
V
DD
DD
All inputs ≤ V
Cycle time ≥
IH
- 0.2; Cycle time ≥
= MAX; Outputs open
DD
; Cycle time ≥
CONDITIONS
= +3.3V ±0.165V unless otherwise noted)
CKE# ≥ V
IH
SS
SS
; All inputs ≤ V
ZZ ≥ V
+ 0.2 or ≥ V
+ 0.2 or ≥ V
IL
t
IH
KC (MIN)
IH
or ≥ V
DD
;
DD
DD
DD
t
= MAX;
KC (MIN);
= MAX;
= MAX;
= MAX;
t
IH
KC (MIN)
DD
DD
;
SS
- 0.2;
- 0.2;
+ 0.2
IL
DD
17
Q = +2.5V +0.4V/-0.125V for 2.5V I/O configuration.
SYMBOL TYP
I
I
I
I
I
I
SB
DD
SB
SB
SB
DD
2
2
3
4
1
Z
4Mb: 256K x 18, 128K x 32/36
165
FLOW-THROUGH ZBT SRAM
0.5
0.5
10
37
Micron Technology, Inc., reserves the right to change products or specifications without notice.
6
-10
300
28
10
25
65
10
DD
Q increases with faster cycle times and
MAX
-11
275
22
10
25
65
10
-12
250
20
10
25
60
10
UNITS NOTES
©2003, Micron Technology, Inc.
mA
mA
mA
mA
mA
mA
2, 3, 4
2, 3, 4
3, 4
3, 4
3, 4
3, 4