STB100NH02L ST Microelectronics, Inc., STB100NH02L Datasheet - Page 2

• Manufacturer Part Number: STB100NH02L
• Description: N-channel 24V - 0.0052 Ohm - 60A D2PAK StripFET Iii Power MOSFET
• Manufacturer: ST Microelectronics, Inc.

STB100NH02L
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
OFF
ON
DYNAMIC
2/11
Rthj-case
Rthj-amb
V
Symbol
Symbol
Symbol
R
V
(BR)DSS
(5)
g
I
I
C
DS(on)
C
GS(th)
C
GSS
DSS
R
fs (5)
T
oss
rss
iss
G
l
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Input Resistance
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
CASE
I
V
V
V
V
V
V
V
f=1 MHz Gate DC Bias=0
Test Signal Level =20 mV
Open Drain
V
D
DS
DS
GS
DS
GS
GS
DS
DS
= 25 mA, V
= 25 °C UNLESS OTHERWISE SPECIFIED)
= 20 V
= 20 V
= V
= 10 V
= ± 20 V
= 10 V
= 5 V
= 15V f = 1 MHz V
Test Conditions
Test Conditions
Test Conditions
GS
GS
T
C
= 0
I
I
I
= 125°C
I
D
D
D
D
= 250 µA
= 30 A
= 15 A
= 30 A
GS
Max
Max
= 0
Min.
Min.
Min.
24
1
0.0052
62.5
0.007
300
2850
1.5
Typ.
Typ.
Typ.
800
120
1.8
40
1
0.006
0.011
Max.
±100
Max.
Max.
10
1
°C/W
°C/W
°C
Unit
Unit
Unit
µA
µA
nA
pF
pF
pF
V
V
S