STB100NH02L ST Microelectronics, Inc., STB100NH02L Datasheet - Page 3

• Manufacturer Part Number: STB100NH02L
• Description: N-channel 24V - 0.0052 Ohm - 60A D2PAK StripFET Iii Power MOSFET
• Manufacturer: ST Microelectronics, Inc.

STB100NH02L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(1)
(
(3)
(
Safe Operating Area
2
4
) Value limited by wire bonding
) Starting T
Garanted when external Rg=4.7
Pulse width limited by safe operating area.
Symbol
Symbol
Symbol
V
t
t
I
I
Q
Q
SD (5)
d(on)
d(off)
SDM
RRM
I
Q
Q
SD
t
t
t
rr
gs
gd
r
f
rr
g
j
= 25
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay Time
Fall Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
o
C, I
D
= 30A, V
Parameter
Parameter
Parameter
DD
= 15V
and t
f
< t
fmax
.
V
(Resistive Load, Figure 3)
V
V
R
(Resistive Load, Figure 3)
I
I
V
(see test circuit, Figure 5)
SD
SD
R
DD
DD
DD
DD
G
G
= 4.7
= 30 A
= 60 A
=10 V I
= 10 V
= 10 V
= 16 V
= 4.7
Test Conditions
Test Conditions
Test Conditions
D
=60 A V
(5)
(6)
Thermal Impedance
di/dt = 100A/µs
(7)
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Q
Gate charge for synchronous operation
V
T
oss =
GS
V
V
j
= 150°C
GS
GS
GS
I
I
D
D
= 0
C
=10 V
= 10 V
=30 A
= 10 V
= 30 A
oss
* V
in ,
C
oss =
Min.
Min.
Min.
C
gd +
C
Typ.
47.5
Typ.
Typ.
ds .
13
75
10
50
18
35
35
7
2
See Appendix A
Max.
Max.
Max.
24.3
240
1.3
64
60
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
A
A
V
A
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