STB11NB40T4 ST Microelectronics, Inc., STB11NB40T4 Datasheet - Page 2

• Manufacturer Part Number: STB11NB40T4
• Description: N-channel 400V - 0.48 Ohm - 10.7A D2PAK/I2PAK PowerMESH" MOSFET
• Manufacturer: ST Microelectronics, Inc.

STB11NB40/STB11NB40-1
Table 3. Absolute Maximum Ratings
Note: 1. Pulse width limited by safe operating area
Table 4. Thermal Data
Table 5. Avalanche Characteristics
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Symbol
Symbol
dv/dt
Symbol
R
R
I
V
DM
2. I
thj-case
V
V
thj-amb
E
P
T
I
DGR
I
I
T
AR
T
GS
DS
stg
AS
D
D
tot
j
l
(1)
SD
(2)
≤ 11A, di/dt ≤ 200 A/µs, V
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (cont.) at T
Drain Current (cont.) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Storage Temperature
Storage Temperature
Max. Operating Junction Temperature
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
j
= 25 °C; I
DD
≤ V(
Parameter
Parameter
Parameter
D
C
GS
= I
= 25 °C
BR)DSS
GS
j
C
C
max, δ < 1%)
AR
= 20 kΩ)
= 25 °C
= 100 °C
= 0)
; V
, T
DD
j
≤ T
= 50 V)
JMAX
Max
Max
Max Value
-65 to 150
Value
Value
± 30
10.7
42.8
62.5
10.7
400
400
125
150
300
530
6.7
1.0
4.5
1.0
°C/W
W°/C
°C/W
V/ns
Unit
Unit
Unit
mJ
°C
°C
°C
W
A
A
V
V
V
A
A