STB11NB40T4 ST Microelectronics, Inc., STB11NB40T4 Datasheet - Page 3

• Manufacturer Part Number: STB11NB40T4
• Description: N-channel 400V - 0.48 Ohm - 10.7A D2PAK/I2PAK PowerMESH" MOSFET
• Manufacturer: ST Microelectronics, Inc.

ELECTRICAL CHARACTERISTICS (T
Table 6. Off
Table 7. On
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Table 8. Dynamic
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Table 9. Switching On
Table 10. Switching Off
V
Symbol
Symbol
Symbol
Symbol
Symbol
R
V
(BR)DSS
td(on)
g
t
I
I
C
DS(on)
C
r(Voff)
GS(th)
C
Q
Q
DSS
GSS
fs
Q
tr
t
oss
t
iss
rss
gd
c
gs
f
g
(1)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
(1)
Parameter
Parameter
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
V
V
I
V
V
V
V
V
V
V
V
D
V
V
GS
GS
DS
DS
DS
DS
DS
DD
DD
DD
GS
GS
= 250 µA; V
case
= Max Rating
= Max Rating Tc = 125 °C
= ± 30 V
= V
= 10V; I
> I
= 25 V; f = 1 MHz; V
= 200 V; I
= 320 V; I
= 320 V; I
= 10 V (see test circuit, Figure 16)
= 10 V; (see test circuit, Figure 18)
D(on)
= 25°C unless otherwise specified)
GS
; I
x R
Test Conditions
Test Conditions
D
Test Conditions
Test Conditions
Test Conditions
D
GS
= 5.3 A
D
D
D
= 250 µA
DS(on)max
= 5.3 A; R
= 10.7 A; V
= 10.7 A; R
= 0
; I
GS
G
D
GS
G
= 0
= 4.7 Ω
= 5.3 A
= 4.7 Ω
= 10 V
STB11NB40/STB11NB40-1
Min.
Min.
Min.
Min.
Min.
400
3
5
1115
Typ.
Typ.
0.48
Typ.
Typ.
29.5
10.6
11.8
Typ.
210
6.5
22
17
10
10
10
17
4
± 100
1450
Max.
Max.
0.55
Max.
Max.
Max.
280
50
30
25
15
43
14
14
25
1
5
Unit
Unit
Unit
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
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