BU508DX Philips Semiconductors (Acquired by NXP), BU508DX Datasheet

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BU508DX

Manufacturer Part Number
BU508DX
Description
BU508DX; Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors (Acquired by NXP)
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope with integrated efficiency
diode, primarily for use in horizontal deflection circuits of colour television receivers.
QUICK REFERENCE DATA
PINNING - SOT399
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
July 1998
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
V
t
SYMBOL
V
V
I
I
I
I
P
T
T
SYMBOL
R
R
R
C
CM
Csat
f
case isolated
C
CM
B
BM
PIN
stg
j
CESM
CEO
tot
CEsat
F
CESM
CEO
tot
th j-hs
th j-hs
th j-a
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
case
CONDITIONS
V
T
I
f = 16kHz
I
I
CONDITIONS
V
T
CONDITIONS
without heatsink compound
with heatsink compound
in free air
1 2 3
C
F
Csat
hs
hs
1
BE
BE
= 4.5 A
= 4.5 A; I
= 0 V
= 0 V
= 4.5 A; f = 16kHz
25 ˚C
25 ˚C
B
= 1.6 A
SYMBOL
b
TYP.
TYP.
MIN.
Product specification
-65
4.5
1.6
0.7
35
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
MAX.
MAX.
1500
1500
BU508DX
e
c
700
700
150
150
1.0
2.0
3.7
2.8
15
45
15
45
8
8
4
6
-
-
-
Rev 1.200
UNIT
UNIT
UNIT
K/W
K/W
K/W
˚C
˚C
W
W
V
V
A
A
V
A
V
V
V
A
A
A
A
s

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BU508DX Summary of contents

Page 1

... 16kHz 16kHz Csat PIN CONFIGURATION case CONDITIONS ˚C hs CONDITIONS without heatsink compound with heatsink compound in free air 1 Product specification BU508DX TYP. MAX. UNIT - 1500 V - 700 1 1.6 2.0 V 0.7 - ...

Page 2

... 100 mA 4 CONDITIONS I = 0.1 A 4.5 A;L 1 mH;C Csat 1 B(end 2. Product specification BU508DX MIN. TYP. MAX. - 2500 - 22 - MIN. TYP. MAX 1 2 700 - - - - 1 1 1.6 2.0 TYP. MAX 125 - ...

Page 3

... July 1998 ICsat t IBend t IBend -VBB t Fig.3. Switching times test circuit ICsat 100 0.1 - IBM Fig.4. Typical DC current gain Product specification BU508DX + 150 v nominal adjust for ICsat 1mH D.U.T. LB 12nF BU508AD parameter V CE Rev 1.200 ...

Page 4

... BU508AD PD% 120 110 100 Fig.8. Normalised power dissipation Product specification BU508DX BU508AD 4. IB/A V sat = parameter Normalised Power Derating with heatsink compound 100 120 140 Ths / C PD% = 100 P ...

Page 5

... Fig.11. Forward bias safe operating area NB: Mounted without heatsink compound and 100 1000 VCE / V = 25˚ Product specification BU508DX 0.01 ICM max IC max II Ptot max 100 VCE / V Region of permissible DC operation. Extension for repetitive pulse operation. ...

Page 6

... Net Mass: 5.88 g 4.5 27 max 22.5 max 18.1 min Fig.12. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". July 1998 16.0 max 0.7 10.0 25.1 25.7 5.1 2.2 max 4.5 1.1 0.4 M 5.45 5.45 6 Product specification BU508DX 5.8 max 3.0 3 0.95 max 3.3 Rev 1.200 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 7 Product specification BU508DX Rev 1.200 ...

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