BU508DX Philips Semiconductors (Acquired by NXP), BU508DX Datasheet - Page 4
BU508DX
Manufacturer Part Number
BU508DX
Description
BU508DX; Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors (Acquired by NXP)
Datasheet
1.BU508DX.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Philips Semiconductors
July 1998
Silicon Diffused Power Transistor
Fig.5. Typical collector-emitter saturation voltage.
Fig.6. Typical base-emitter saturation voltage.
0.9
0.7
0.5
0.3
0.1
0.8
0.6
0.4
0.2
1.4
1.2
0.8
0.6
1
0
1
0
0.1
VBESAT / V
VCESAT / V
IC = 4.5A
IC = 3A
V
V
CE
BE
sat = f (I
sat = f (I
1
IC = 6A
C
); parameter I
B
); parameter I
2
1
3
C
/I
C
IC / A
B
BU508AD
IB / A
BU508AD
10
4
4
Fig.7. Typical collector-emitter saturation voltage.
120
110
100
0.1
10
90
80
70
60
50
40
30
20
10
1
0.1
0
VCESAT/V
Fig.8. Normalised power dissipation.
0
PD%
PD% = 100 P
V
20
CE
sat = f (I
40
60
B
); parameter I
D
Ths / C
/P
1
D 25˚C
80
Normalised Power Derating
IB/A
with heatsink compound
= f (T
Product specification
100
IC = 4.5A
IC = 3A
IC = 6A
hs
C
120
BU508DX
)
BU508AD
Rev 1.200
140
10