STGW50H65F STMicroelectronics, STGW50H65F Datasheet - Page 3

• Manufacturer Part Number: STGW50H65F
• Description: 50 A, 650 V Field Stop Trench Gate Igbt
• Manufacturer: STMicroelectronics

STGW50H65F
2
Electrical characteristics
T
Table 4.
Table 5.
Table 6.
V
Symbol
J
Symbol
Symbol
V
(di/dt)
(di/dt)
V
(BR)CES
t
t
= 25 °C unless otherwise specified.
t
t
CE(sat)
I
t
t
r
r
I
C
GE(th)
C
C
Q
Q
(V
d
(V
d
CES
GES
d(on)
d(on)
Q
(
(
oes
t
t
t
t
res
ies
ge
off
off
gc
r
r
f
f
off
off
g
on
on
)
)
)
)
Collector-emitter
breakdown voltage
(V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
GE
GE
Static
Dynamic
Switching on/off (inductive load)
= 0)
= 0)
Parameter
Parameter
Parameter
CE
= 0)
Doc ID 018671 Rev 1
I
V
V
T
V
V
V
V
C
GE
GE
J
GE
CE
CE
V
R
V
R
T
V
R
V
R
T
CE
= 2 mA
= 125 °C
J
J
CE
CE
CE
CE
G
G
G
G
= V
= 650 V
= 125 °C
= 125 °C
= 15 V, I
= 15 V, I
= ± 20 V
= 25 V, f = 1 MHz, V
= 4.7 Ω, V
= 4.7 Ω, V
= 4.7 Ω, V
= 4.7 Ω, V
= 400 V, I
= 400 V, I
= 400 V, I
= 400 V, I
Test conditions
Test conditions
Test conditions
GE
, I
C
C
C
= 1 mA
= 50 A
= 50 A
GE
GE
GE
GE
C
C
C
C
= 50 A,
= 50 A,
= 50 A,
= 50 A,
= 15 V
= 15 V
= 15 V
= 15 V
GE
=0
Electrical characteristics
Min.
650
Min.
Min.
-
-
-
-
-
Typ.
7500
Typ. Max.
TBD
TBD
TBD
Typ.
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
1.9
2.1
6.5
210
120
Max.
Max.
100
25
-
-
-
-
-
Unit
Unit
A/µs
A/µs
Unit
nC
nC
nC
pF
pF
pF
µA
nA
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
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