MT28F400B3 Micron Technology, MT28F400B3 Datasheet - Page 15

• Manufacturer Part Number: MT28F400B3
• Description: (MT28F004B3 / MT28F400B3) FLASH MEMORY
• Manufacturer: Micron Technology

NOTE:
09005aef8114a789
F45.fm - Rev. E 6/04 EN
1. Sequence may be repeated for additional BYTE or WORD WRITEs.
2. Complete status check is not required. However, if SR3 = 1, further WRITEs are inhibited until the status register is
3. Device will be in status register read mode. To return to the array read mode, the FFh command must be issued.
4. If SR3 is set during a WRITE or BLOCK ERASE attempt, CLEAR STATUS REGISTER must be issued before further WRITE or
5. Status register bits 3-5 must be cleared using CLEAR STATUS REGISTER.
Figure 5: Self-Timed WRITE Sequence
cleared.
ERASE operations are allowed by the CEL.
(Word or Byte WRITE)
WRITE Word or Byte
WRITE 40h or 10h
STATUS REGISTER
WRITE Complete
Check (optional)
Complete Status
Address/Data
SR7 = 1?
V
READ
Start
PP
= 5V
YES
2
3
NO
1
SMART 3 BOOT BLOCK FLASH MEMORY
15
Start (WRITE completed)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WRITE Successful
Figure 6: Complete WRITE
Status-Check Sequence
SR3 = 0?
SR4 = 0?
YES
YES
NO
NO
©2003 Micron Technology, Inc. All rights reserved.
V
BYTE/WORD WRITE Error
PP
Error
4, 5
4Mb
5