MT28F320A18 Micron Technology, MT28F320A18 Datasheet - Page 29

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MT28F320A18

Manufacturer Part Number
MT28F320A18
Description
FLASH MEMORY
Manufacturer
Micron Technology
Datasheet
DataSheet4U.com
www.DataSheet4U.com
DataSheet
READ CYCLE TIMING REQUIREMENTS
Notes: 1. See Figures 11 and 12 for timing requirements and output load configuration.
WRITE CYCLE TIMING REQUIREMENTS
2 Meg x 16, 1.8V Enhanced+ Boot Block Flash Memory
MT28F320A18_F.fm – Rev F 08/03 EN
PARAMETER
Address to output delay
CE# LOW to output delay
OE# LOW to output delay
RP# HIGH to output delay
CE# or OE# HIGH to output High-Z
Output hold from address, CE#, or OE# change
READ cycle time
OE# LOW to valid status register data
PARAMETER
RP# HIGH recovery to WE# going LOW
CE# setup to WE# going LOW
Write pulse width
Data setup to WE# going HIGH
Address setup to WE# going HIGH
CE# hold from WE# HIGH
Data hold from WE# HIGH
Address hold from WE# HIGH
Write pulse width HIGH
RP# pulse width
WP# setup to WE# going HIGH
V
Write recovery before READ
WP# hold from valid SRD
V
WE# HIGH to data valid
4
PP
PP
U
setup to WE# going HIGH
hold from valid SRD
.com
1.8V ENHANCED+ BOOT BLOCK FLASH MEMORY
DataSheet4U.com
1
29
SYMBOL
SYMBOL
t
t
t
t
t
t
t
t
t
VPPH
RWH
WPH
t
WOS
t
t
t
t
t
AOE
t
t
t
RHH
ACE
t
SRD
t
t
RHS
t
t
t
VPS
WP
WB
AA
OD
OH
DH
AH
CH
RC
RS
CS
DS
AS
RP
V
V
CC
CC
MIN
MIN
150
100
200
200
70
70
70
70
30
50
0
0
0
0
0
0
0
= 1.65V–1.95V
= 1.65V–1.95V
-70
-70
2 MEG x 16
t
AA+50
MAX
MAX
150
70
70
20
15
25
©2003 Micron Technology Inc.
UNITS
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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