MT54W1MH36B Micron Technology, MT54W1MH36B Datasheet - Page 10

• Manufacturer Part Number: MT54W1MH36B
• Description: SRAM 2-WORD BURST
• Manufacturer: Micron Technology

FBGA BALL DESCRIPTIONS (continued)
36Mb: 1.8V V
MT54W2MH18B_A.fm - Rev 9/02
SYMBOL
V
V
V
Q_
NC
DD
DD
SS
DD
Q
, HSTL, QDRIIb2 SRAM
Output
Supply
Supply
Supply
TYPE
–
Synchronous Data Outputs: Output data is synchronized to the respective C and C# or to K
and K# rising edges if C and C# are tied HIGH. This bus operates in response to R# commands.
See Ball Assignment figures for ball site location of individual signals. The x8 device uses D0-
D7. The x9 device uses D0-D8. The x18 device uses Q0–Q17. Remaining signals are NC. The x36
device uses Q0–Q35. Remaining signals are NC.
Power Supply: 1.8V nominal. See DC Electrical Characteristics and Operating Conditions for
range.
Power Supply: Isolated Output Buffer Supply. Nominally 1.5V. 1.8V is also permissible. See DC
Electrical Characteristics and Operating Conditions for range.
Power Supply: GND.
No Connect: These signals are not internally connected and may be connected to ground to
improve package heat dissipation.
4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36
10
1.8V V
DESCRIPTION
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
, HSTL, QDRIIb2 SRAM
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©2002, Micron Technology Inc.
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