MTC3504BJ4 Cystech Electonics, MTC3504BJ4 Datasheet - Page 4

• Manufacturer Part Number: MTC3504BJ4
• Description: N & P-Channel Enhancement Mode Power MOSFET
• Manufacturer: Cystech Electonics

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Characteristic Curves
N-Channel
MTC3504BJ4
10
1.9
1.6
1.3
1.0
50
40
30
20
0.7
0.4
0
25
20
15
10
-50
30
5
0
0
1
I = 10A
V = 10V
D
V = 10V
GS
GS
On-Resistance Variation with Temperature
V = 10V
-25
DS
V - Drain S ource Voltage(V)
T - Junction Temperature (°C)
DS
On-Region Characteristics
1
J
V - Gate-to-S ource Voltage(V)
GS
Transfer Characteristics
8.0V
0
2
7.0V
25
2
5.0V
4.0V
3.5V
6.0V
50
3
T = -55° C
A
3
75
CYStech Electronics Corp.
125° C
100
4
4
125
25° C
150
5
5
0.09
0.08
0.06
0.05
0.04
0.03
0.02
0.07
0.01
0.001
2.0
1.8
1.6
1.4
1.2
1.0
2.4
2.2
0.8
0.01
100
0.1
10
1
0
On-Resistance Variation with Drain Current and Gate Voltage
0
2
V = 3.5 V
GS
V = 0V
On-Resistance Variation with Gate-to-S ource Voltage
GS
Body Diode Forward Voltage Variation with
S ource Current and Temperature
V - Gate-to-S ource Voltage(V)
0.2
GS
V - Body Diode Forward Voltage(V)
10
S D
4
0.4
5.0 V
I - Drain Current(A)
T = 125° C
D
A
20
0.6
25° C
6.0 V
6
0.8
T = 25°C
-55° C
30
A
7.0 V
8.0 V
CYStek Product Specification
10 V
Spec. No. : C449J4
Issued Date : 2009.03.11
Revised Date :
Page No. : 4/11
1.0
I = 10 A
D
8
T = 125°C
A
40
1.2
1.4
50
10
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