MTC3504BJ4 Cystech Electonics, MTC3504BJ4 Datasheet - Page 5

• Manufacturer Part Number: MTC3504BJ4
• Description: N & P-Channel Enhancement Mode Power MOSFET
• Manufacturer: Cystech Electonics

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Characteristic Curves(Cont.)
MTC3504BJ4
0.001
10
10
0.01
80
50
0
2
8
6
4
0.1
1
0
10
1
0
0
R
I = 10A
DS(ON)
D
Duty Cycle = 0.5
-4
Single Pulse
R = 6°C/ W
V = 10V
θ
T = 25°C
0.2
0.1
0.02
0.01
0.05
JC
C
Limit
GS
1
V - Drain-Source Voltage(V)
Maximum Safe Operating Area
DS
Gate Charge Characteristics
Q - Gate Charge(nC)
Single Pulse
10
g
4
-3
V = 15V
DS
10
DC
Transient Thermal Response Curve
8
10
10s
-2
20V
1s
100ms
CYStech Electronics Corp.
10ms
10
t ,Time (sec)
1
12
1ms
-1
40 50
100
μ
s
1
16
10
1.Duty Cycle,D =
2.R =6°C/ W
3.T - T = P * R (t)
4.R (t)=r(t) * R
Notes
θ
J
θ
JC
JC
P
C
DM
1200
600
300
900
100
:
0
0.001
t1
20
10
50
30
40
0
θ
θ
t2
JC
JC
0
t1
t2
V - Drain-S ource Voltage( V )
S ingle Pulse Maximum Power Dissipation
DS
Capacitance Characteristics
0.01
1000
10
Coss
Crss
Ciss
0.1
t ,Time (sec)
1
20
1
R = 6°C/ W
Single Pulse
T = 25°C
θ
C
CYStek Product Specification
Spec. No. : C449J4
Issued Date : 2009.03.11
Revised Date :
Page No. : 5/11
JC
10
30
f = 1MHz
V = 0 V
GS
100
1000
40
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