2SB1148 Panasonic Semiconductor, 2SB1148 Datasheet
2SB1148
Manufacturer Part Number
2SB1148
Description
Silicon PNP epitaxial planar type(For low-voltage switching)
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SB1148.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SB1148-Q
Manufacturer:
PANASONIC
Quantity:
2 800
Power Transistors
2SB1148, 2SB1148A
Silicon PNP epitaxial planar type
For low-voltage switching
Complementary to 2SD1752 and 2SD1752A
*
h
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
FE2
Features
Low collector to emitter saturation voltage V
High-speed switching
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings
Electrical Characteristics
Rank
h
FE2
Rank classification
Parameter
Parameter
90 to 180
2SB1148
2SB1148A
2SB1148
2SB1148A
T
Ta=25 C
C
Q
=25 C
2SB1148
2SB1148A
2SB1148
2SB1148A
130 to 260
Symbol
V
V
V
I
I
P
T
T
CP
C
P
C
j
stg
CBO
CEO
EBO
I
I
V
h
h
V
V
f
C
t
t
t
on
stg
f
CBO
EBO
T
FE1
FE2
(T
Symbol
CEO
CE(sat)
BE(sat)
ob
C
*
(T
=25˚C)
–55 to +150
C
=25˚C)
Ratings
–40
–50
–20
–40
–20
–10
150
1.3
–7
15
V
V
V
I
V
V
I
I
V
V
I
V
CE(sat)
C
C
C
C
CB
CB
EB
CE
CE
CE
CB
CC
= –10mA, I
= –10A, I
= –10A, I
= –3A, I
= –5V, I
= –2V, I
= –2V, I
= –10V, I
= –40V, I
= –50V, I
= –10V, I
= –20V
B1
Unit
Conditions
B
B
C
C
C
˚C
˚C
W
V
V
V
A
A
= – 0.1A, I
C
E
E
B
= – 0.33A
= – 0.33A
E
= 0
= – 0.1A
= –3A
= 0
= 0
= 0, f = 1MHz
= – 0.5A, f = 10MHz
= 0
B2
= 0.1A,
1.1 0.1
min
–20
–40
1
45
90
1
7.0 0.3
3.0 0.2
4.6 0.4
7.0 0.3
4.6 0.4
2
2
3
3
2.3 0.2
2.3 0.2
0.75 0.1
0.75 0.1
2.0 0.2
3.0 0.2
1.1 0.1
100
400
typ
0.1
0.5
0.1
1:Base
2:Collector
3:Emitter
I Type Package (Y)
2.5
0.5 max.
3.5 0.2
– 0.6
max
–1.5
–50
–50
–50
260
3.5 0.2
1:Base
2:Collector
3:Emitter
I Type Package
0.4 0.1
0.85 0.1
0.9 0.1
Unit: mm
Unit: mm
0 to 0.15
0 to 0.15
MHz
Unit
pF
V
V
V
A
A
s
s
s
1
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2SB1148 Summary of contents
Page 1
... Power Transistors 2SB1148, 2SB1148A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1752 and 2SD1752A Features Low collector to emitter saturation voltage V High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. Absolute Maximum Ratings ...
Page 2
... CC T =25˚ stg 0 0 0.03 0.01 0 –1 –2 –3 –4 –5 –6 –7 –8 Collector current 2SB1148, 2SB1148A V — I CE(sat) C – = –3 –1 T =100˚C C – 0.3 25˚C –25˚C – 0.1 – 0.03 – 0.01 – 0.1 – 0.3 –1 –3 – ...
Page 3
... Power Transistors –1 10 –4 –3 –2 – Time — t th(t) (1) Without heat sink (2) With 2mm Al heat sink (1) ( 2SB1148, 2SB1148A 4 3 ...